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首页> 外文期刊>Journal of Wuhan University of Technology. Materials Science edition >Fabrication of Poly-Si Thin Film on Glass Substrate by Aluminum-induced Crystallization]
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Fabrication of Poly-Si Thin Film on Glass Substrate by Aluminum-induced Crystallization]

机译:铝诱导结晶在玻璃基板上制备多晶硅薄膜

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摘要

Amorphous silicon {a-Si) thin films were deposited on glass substrate by PECVD, and poly-crystalline silicon (poly- Si) thin films were prepared by aluminum- induced crystallization (AIC) . The effects of annealing temperature on live microstructure and morphology were investigated. The AIC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400 deg C for 20 min , a-Si films begin to crystallize after annealing at 450 deg C for 20 min, and tlie crystal-Unity of a- Si thin films is enhanced obviously with the increment of annealing temperature .
机译:通过PECVD在玻璃基板上沉积非晶硅(a-Si)薄膜,并通过铝诱导结晶(AIC)制备多晶硅(poly-Si)薄膜。研究了退火温度对活组织和形态的影响。用XRD,拉曼和SEM对AIC多晶硅薄膜进行了表征。发现a-Si薄膜在400℃退火20min后具有非晶态结构,a-Si膜在450℃退火20min后开始结晶,并且晶体均匀。随着退火温度的升高,薄膜明显增强。

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