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首页> 外文期刊>Journal of Ceramic Processing Research. (Text in English) >Effects of flow rate of oxygen and substrate temperature on the characteristics of IZO thin films for OLEDs
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Effects of flow rate of oxygen and substrate temperature on the characteristics of IZO thin films for OLEDs

机译：氧气流速和基板温度对OLED的IZO薄膜特性的影响

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This study examined the effects of the O-2 flow rate and the substrate temperature on the structural, electrical, and optical characteristics of the IZO thin films intended for use as anode materials in OLEDs (organic light emitting diodes). These IZO thin films were deposited by RF magnetron sputtering at room temperature and 300 degrees C at various O-2 flow rates. To examine the effects of O-2, the O-2 flow rate in the argon mixing gas was changed from 0.1 sccm to 0.5 sccm. IZO thin films deposited at room temperature showed an amorphous structure, whereas IZO thin films deposited at 300 o C showed a crystalline structure with an (222) preferential orientation regardless of the O-2 flow rate. The electrical resistivity of the IZO thin films increased with increasing O-2 flow rate under Ar + O-2. The change in the electrical resistivity with increasing O-2 flow rate was interpreted mainly in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at 300 degrees C. All the films showed an average transmittance of more than 83% in the visible range. The optical band gap of the IZO films increased with decreasing O-2 flow rate. The current density and luminance of the OLED devices with IZO thin films deposited at room temperature in 0.1 sccm O-2 ambient gas were the highest among the films examined. These properties were attributed to the improved optical band gap, which plays a major role in the OLED device performance.
机译：这项研究检查了O-2流量和基板温度对IZO薄膜的结构，电学和光学特性的影响，该IZO薄膜打算用作OLED（有机发光二极管）的阳极材料。这些IZO薄膜是通过RF磁控溅射在室温和300℃下以各种O-2流速沉积的。为了检查O-2的作用，将氩气混合气体中的O-2流量从0.1sccm改变为0.5sccm。在室温下沉积的IZO薄膜显示出非晶结构，而在300 o C沉积的IZO薄膜则显示出具有（222）优先取向的晶体结构，而与O-2流量无关。 IZO薄膜的电阻率在Ar + O-2下随着O-2流量的增加而增加。电阻率随O-2流量的增加而发生的变化主要是根据载流子浓度而不是载流子迁移率来解释的。在室温下沉积的非晶态IZO膜的电阻率比在300℃下沉积的结晶IZO薄膜的薄膜低。所有薄膜在可见光范围内的平均透射率均大于83％。 IZO薄膜的光学带隙随着O-2流量的减小而增加。在所检查的薄膜中，室温下在0.1 sccm O-2环境气体中沉积有IZO薄膜的OLED器件的电流密度和亮度最高。这些特性归因于光学带隙的改善，这在OLED器件的性能中起着重要作用。

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