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首页> 外文期刊>日本セラミックス協会学術論文誌 >Experimental and Computational Study of Grain Growth and Microstructures in AIN Composite Ceramics
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Experimental and Computational Study of Grain Growth and Microstructures in AIN Composite Ceramics

机译：AIN复合陶瓷晶粒长大和组织的实验与计算研究。

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Grain growth of AIN-TiN composite ceramics was studied under conditions where the AIN/Al_2O_3/Y_2O_3 grain boundary phase is presumed to be liquid. It was found that the growth of AIN grains was strongly inhibited as the level of TiN additions increased. Compared to AIN, TiN particles showed very little grain growth under the conditions studied. AIN grain growth in both monolithic and composite systems proceeded at a rate of one-third the sintering time, and it was postulated that AIN grain growth proceeded by the "solution-reprecipitation" mechanism. Microstructure observation showed that TiN particles were present at grain boundaries and within AIN grains. Heat treatment of the composite resulted in a severe microstructural change in which the grain boundary phase was isolated at triple points of AIN grains. Computational studies of grain growth in the presence of both, a liquid phase and dispersoids, similar to the AIN-TiN composite system, were undertaken using Monte Carlo simulation based on the Potts model. The simulation effectively expressed the dependency of grain growth on the size and amount of dispersoid as well as predicting the inclusion of dispersoid particles into matrix grains. Adjusting the #gamma#_(sl)/ #gamma#_(ss) value from 0.5 to 1.0 yielded microstructural changes that were similar to those observed upon annealing experiments.
机译：在AlN / Al_2O_3 / Y_2O_3晶界相被假定为液态的条件下研究了AlN-TiN复合陶瓷的晶粒长大。发现随着TiN添加量的增加，AIN晶粒的生长受到强烈抑制。与AIN相比，TiN颗粒在所研究的条件下几乎没有晶粒长大。整体和复合体系中AIN晶粒的生长速度均为烧结时间的三分之一，并且可以推测AIN晶粒的生长是通过“溶液再沉淀”机制进行的。显微组织观察表明，TiN颗粒存在于晶界和AIN晶粒内。复合材料的热处理导致严重的微观结构变化，其中晶界相在AIN晶粒的三点处被隔离。使用基于Potts模型的Monte Carlo模拟，对与AIN-TiN复合系统相似的液相和弥散体共同存在下的晶粒生长进行了计算研究。该模拟有效地表达了晶粒长大对弥散体的大小和数量的依赖性，并预测了弥散体颗粒包含在基体晶粒中。将#gamma #_（sl）/ #gamma #_（ss）值从0.5调整为1.0，会产生类似于退火实验中观察到的微观结构变化。

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