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首页> 外文期刊>日本セラミックス協会学術論文誌 >Epitaxial Growth of (Ba, Sr) TiO_3 Thin Films and Their Ferroelectric Properties
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Epitaxial Growth of (Ba, Sr) TiO_3 Thin Films and Their Ferroelectric Properties

机译：（Ba，Sr）TiO_3薄膜的外延生长及其铁电性能

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摘要

A series of studies on heteroepitaxial Ba_xSr_(1-x)TiO_3 (BST) films grown by radio-frequency magnetron sputtering was reviewed. It is theoretically suggested that the application of two-dimensional compressive stresses to a ferroelectric crystal raise the Curie temperature. Artificial modification of the Curie temperature was experimentally made by introducing lattice misfit strains in heteroepitaxial films. A heteroepitaxial BaTiO_3 film with a thickness of 12nm grown on a SrRuO_3/SrTiO_3 substrate exhibited a ferroelectric hysteresis loop at 200 deg C, even though the inherent Curie temperature is 130 deg C. The possibility for ferroelectric nonvolatile memory applications of heteroepitaxial BST films and their advantages over Pb (Zr, Ti)O_3 or SrBi_2 Ta_2O_9 was discussed.
机译：对射频磁控溅射生长的异质外延Ba_xSr_（1-x）TiO_3（BST）薄膜进行了一系列研究。从理论上讲，在铁电晶体上施加二维压缩应力会使居里温度升高。通过在异质外延膜中引入晶格失配应变，对居里温度进行了人工修改。即使固有居里温度为130℃，在SrRuO_3 / SrTiO_3衬底上生长的厚度为12nm的异质外延BaTiO_3膜在200℃时仍显示出铁电磁滞回线。讨论了优于Pb（Zr，Ti）O_3或SrBi_2 Ta_2O_9的优点。

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