Accurate evaluation of integrals arising from the bulk electron densities in quantum wells of high electron mobility transistors

Mamedov BA

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Accurate evaluation of integrals arising from the bulk electron densities in quantum wells of high electron mobility transistors

机译：准确评估由高电子迁移率晶体管的量子阱中的体电子密度引起的积分

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In this paper we propose a new accurate approach to compute integrals I-r(a,b) = 1/Gamma(r+1) integral(infinity)(0) (x+b)(r)/1+e(x-a) dx arrays of the electron density and energy density in a multi-layered high electron mobility transistors (HEMTs) device. These new formulas enable the user to calculate efficiently the certain integrals. Example results on the simulation of a certain integrals are given to demonstrate the efficiency of the new scheme. The results are compared with other theoretical calculation results. The convergence rate of the series is estimated and discussed. (C) 2008 Elsevier B.V. All rights reserved.

机译：在本文中，我们提出了一种新的精确方法来计算积分Ir（a，b）= 1 / Gamma（r + 1）积分（无穷）（0）（x + b）（r）/ 1 + e（xa）dx多层高电子迁移率晶体管（HEMT）器件中的电子密度和能量密度阵列。这些新公式使用户可以有效地计算某些积分。给出了某些积分的仿真示例结果，以证明新方案的有效性。将结果与其他理论计算结果进行比较。估计并讨论了该序列的收敛速度。（C）2008 Elsevier B.V.保留所有权利。

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《Computer physics communications》 |2008年第9期|共3页
作者
Mamedov BA;
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正文语种 eng
中图分类计算机的应用;
关键词
HEMT; hot-electron; semiclassical; Schrodinger; electron density; energy density; binomial coefficients;

机译：HEMT;热电子;半经典;薛定inger;电子密度;能量密度;二项式系数;

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1. Accurate evaluation of integrals arising from the bulk electron densities in quantum wells of high electron mobility transistors [J] . Mamedov BA Computer physics communications . 2008,第9期

机译：准确评估由高电子迁移率晶体管的量子阱中的体电子密度引起的积分
2. Simulation of AIGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility [J] . Min Chu, Andrew D. Koehler, Amit Gupta, Journal of Applied Physics . 2010,第10期

机译：基于二维电子气密度和电子迁移率的AlGaN / GaN高电子迁移率晶体管规格因子仿真
3. Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors [J] . Salih Saygi Open Journal of Applied Sciences . 2014,第3期

机译：高电子迁移率晶体管量子阱中能量和电子浓度的分析评估
4. Nonmonotonous Electron Mobility in Double Quantum Well Pseudomorphic High Electron Mobility Transistor Structure [C] . Sangita R. Panda, Sudhakar Das, Arttatran Sahu, 2019 Devices for Integrated Circuit . 2019

机译：双量子阱拟态高电子迁移率晶体管结构中的非单调电子迁移率
5. GaAs-based metamorphic high electron mobility transistors with high indium mole fraction quantum well channels. [D] . Kao, Ming-Yih. 2004

机译：具有高铟摩尔分数量子阱通道的基于GaAs的变质高电子迁移率晶体管。
6. Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications [O] . Y. C. Lin, S. H. Chen, P. H. Lee, 2020

机译：具有厚铜金属化特性的氮化镓（GaN）高电子迁移率晶体管用于Ka波段应用的功率密度为8.2 W / mm
7. 1 Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors [O] . 2015

机译：1高电子迁移率晶体管量子阱中能量和电子浓度的分析评估

Accurate evaluation of integrals arising from the bulk electron densities in quantum wells of high electron mobility transistors

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