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POS-SPRITE - an extensible calculation of positron and electron implantation in metals

机译:POS-SPRITE-金属中正电子和电子注入的可扩展计算

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摘要

Accurately modeling the behavior of a beam of positrons incident upon a solid is of crucial importance for depth-profiling and data analysis in slow positron experiments. We describe a suite of Fortran programs to perform a Monte Carlo calculation of positron implantation in amorphous metals and small bandgap semiconductors. This provides statistical information about penetration (stopping profiles, thermalization time, etc.), energy loss and reemission (backscattering, thin film transmission, etc.) The calculation is implemented using a user-friendly Monte Carlo transport "engine", which is capable of treating particle transport in infinite, semi-infinite, and multilayer systems. A contingent of elastic (up to 10 keV) and inelastic (down to 30 eV) scattering mechanisms is included, but different mechanisms can be added via external data files or code modification. As consequence of the scattering theory involved, this calculation is amenable to electron implantation and scattering.
机译:精确建模入射到固体上的正电子束的行为对于慢速正电子实验中的深度分析和数据分析至关重要。我们描述了一套Fortran程序,用于对非晶态金属和小带隙半导体中的正电子注入进行蒙特卡洛计算。这提供了有关渗透率(停止曲线,热化时间等),能量损失和再排放(反向散射,薄膜透射等)的统计信息。该计算使用易于使用的蒙特卡洛运输“引擎”来实现。在无限,半无限和多层系统中处理粒子传输的过程。包括弹性(最高10 keV)和非弹性(最低30 eV)散射机制,但可以通过外部数据文件或代码修改来添加不同的机制。作为所涉及的散射理论的结果,该计算适用于电子注入和散射。

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