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Sensor Structure Improvements of Electrostatic Force Microscopy for Accurate Voltage Measurement on Photosensitive Materials

机译：静电力显微镜传感器结构的改进，可对光敏材料进行准确的电压测量

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摘要

We developed an apparatus having high spatial resolution for electrostatic surface voltage measurement. Since the apparatus is designed to measure electrostatic force derived from surface voltage with optical lever method, this apparatus can be classified as Electrostatic Force Microscopy. (a.k.a. EFM). A new technology for improvements of surface voltage measurement is introduced. Sensor part of EFM is designed longer as compared to the sensor of conventional Scanning Probe Microscopy (SPM) for accurate surface voltage measurement. We deployed an electrostatic shield underneath cantilever and sensor. The sensor tip was protruded through an aperture located on electrostatic shield (approximately 50μm in length). Although the sensor had a 10° of inclination from normal line, we could reduce undershoot less than 7%. Light power of laser diode for optical lever method was less than 1mW. Leakage light power on surface under test (SUT) without electrostatic shield was less than 100μW, whereas the light power on SUT was reduced less than 100nW therefore we could reduce the leakage light power on SUT in range of 10~4 as compared to the laser diode power. We can eliminate electrostatic force appeared on flanks of sensor as well as light leakage from laser diode for optical lever method.
机译：我们开发了一种具有高空间分辨率的设备，用于静电表面电压测量。由于该设备旨在通过光杠杆法测量从表面电压得出的静电力，因此该设备可以归类为“静电力显微镜”。 （又称为EFM）。介绍了一种改进表面电压测量的新技术。与传统的扫描探针显微镜（SPM）的传感器相比，EFM的传感器部分设计得更长，可进行精确的表面电压测量。我们在悬臂和传感器下方部署了一个静电屏蔽。传感器尖端从位于静电屏蔽罩上的孔（长度约50μm）伸出。尽管传感器与法线的倾角为10°，但我们可以将下冲量降低不到7％。用于光杠杆法的激光二极管的光功率小于1mW。不带静电屏蔽的被测表面（SUT）的漏光功率小于100μW，而被测表面上的漏光功率降低了小于100nW，因此与激光器相比，我们可以将SUT上的漏光功率降低10〜4倍二极管功率。对于光杠杆法，我们可以消除传感器侧面产生的静电力以及激光二极管的漏光。

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