Microtexture was analyzed for Si films crystallized by a phase-modulated excimer laser annealing method, using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Electron Back-Scattering Pattern (EBSP). Threshold fluences were identified for crystallization, lateral growth and film braking, by comparing the surface morphology and the microscopic excimer laser light intensity profile. It was found that {001} and {110} orientations are preferable for lateral growth direction but the surface orientation is random. A possible origin of preferable orientations for laterally grown film was discussed.
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