• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials >ArF Photo Resist Pattern Improvement by VUV Cure
【24h】

ArF Photo Resist Pattern Improvement by VUV Cure

机译：通过VUV固化改进ArF光致抗蚀剂图案

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The dry etching resistance of 130 nm L&S resist patterns was improved by irradiating the vacuum ultraviolet (VUV) light (wavelength of 172 nm) to ArF resist patterns in N2 atmosphere. The film thickness of resist decreased by about 30% under VUV irradiation and the density of C=O bonds of the resist was decreased. The line width also reduced. However, the surface roughness of resist after dry etching improved from 6.2 nm rms which value was obtained under no cure, to 1.9 nm rms which was obtained under VUV irradiation. The line width shrinkage by the electron beam irradiation of CD-SEM was greatly improved from 9 nm to 2 nm by using VUV Cure. Moreover, LER (Line Edge Roughness) of resist patterns was approximately 2 nm improved from 8.4 nm that is under no cure case, to 6.5 nm under VUV irradiation. Using VUV Cure, the dry etching pattern of a SiN film showed near the rectangle cross sectional view, and indicated almost the same LER value as the resist mask pattern. The VUV Cure technique is an attractive method of fine resist pattern fabrication by ArF lithography.
机译：通过在N2气氛中向ArF抗蚀剂图案照射真空紫外（VUV）光（波长为172 nm），可以提高130 nm L＆S抗蚀剂图案的耐干蚀刻性。在VUV照射下，抗蚀剂的膜厚度降低了约30％，并且抗蚀剂的C ＝ O键的密度降低。线宽也减小了。但是，干法蚀刻后的抗蚀剂的表面粗糙度从未固化时获得的6.2nm rms提高到在VUV照射下获得的1.9nm rms。通过使用VUV Cure，CD-SEM的电子束辐照使线宽收缩从9 nm大大提高到2 nm。此外，抗蚀剂图案的LER（线边缘粗糙度）从没有固化情况下的8.4nm提高到在VUV照射下的6.5nm约2nm。使用VUV Cure，SiN膜的干法刻蚀图案显示在矩形横截面附近，并且指示出与抗蚀剂掩模图案几乎相同的LER值。 VUV固化技术是通过ArF光刻法制造精细抗蚀剂图案的有吸引力的方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号