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首页> 外文期刊>CERAMICS INTERNATIONAL >Enhancement of giant dielectric response in Ga-dopedCaCu_3Ti_4O_(12) ceramics
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Enhancement of giant dielectric response in Ga-dopedCaCu_3Ti_4O_(12) ceramics

机译：Ga掺杂CaCu_3Ti_4O_（12）陶瓷中巨介电响应的增强

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摘要

The influences of Ga~(3+) doping ions on the microstructure, dielectric and electrical properties of CaCu_3Ti_4O_(12) ceramics were investigated systematically. Addition of Ga~(3+) ions can cause a great increase in the mean grain size of CaCu_3Ti_4O_(12) ceramics. This is ascribed to the ability of Ga~(3+) doping to enhance grain boundary mobility. Doping CaCu_3Ti_4O_(12) with 0.25 mol% of Ga~(3+) caused a large increase in its dielectric constant from 5439 to 31,331. The loss tangent decreased from 0.153 to 0.044. The giant dielectric response and dielectric relaxation behavior can be well described by the internal barrier layer capacitor model based on Maxwell—Wagner polarization at grain boundaries. The nonlinear coefficient, breakdown field, and electrostatic potential barrier at grain boundaries decreased with increasing Ga~(3+) content. Our results demonstrated the importance of ceramic microstructure and electrical responses of grain and grain boundaries in controlling the giant dielectric response and dielectric relaxation behavior of CaCu_3Ti_4O_(12) ceramics.
机译：系统地研究了Ga〜（3+）掺杂离子对CaCu_3Ti_4O_（12）陶瓷的微观结构，介电性能和电性能的影响。 Ga〜（3+）离子的添加​​会导致CaCu_3Ti_4O_（12）陶瓷的平均晶粒尺寸大大增加。这归因于Ga〜（3+）掺杂增强晶界迁移率的能力。用0.25摩尔％的Ga〜（3+）掺杂CaCu_3Ti_4O_（12）导致其介电常数从5439大幅增加到31,331。损耗角正切从0.153降低到0.044。巨大的介电响应和介电弛豫行为可以通过基于晶界处Maxwell-Wagner极化的内部势垒层电容器模型很好地描述。随着Ga〜（3+）含量的增加，晶界的非线性系数，击穿场和静电势垒减小。我们的结果表明，在控制CaCu_3Ti_4O_（12）陶瓷的巨大介电响应和介电弛豫行为时，陶瓷微结构和晶界和晶界电响应的重要性。

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