Conjugated polymer-grafted reduced graphene oxide for nonvolatile rewritable memory

Zhang B.; Liu G.; Chen Y.; Zeng L.-J.; Zhu C.-X.; Neoh K.-G.; Wang C.; Kang E.-T.

首页> 外文期刊>Chemistry: A European journal >Conjugated polymer-grafted reduced graphene oxide for nonvolatile rewritable memory

【24h】

Conjugated polymer-grafted reduced graphene oxide for nonvolatile rewritable memory

机译：共轭聚合物接枝还原氧化石墨烯用于非易失性可重写存储

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Read/write/execute: PFCF-RGO (see figure) was synthesized by the 1,3-dipolar cycloaddition reaction of azomethine ylide. The J/V curves of the ITO/RGO-PFCF/Al device clearly displayed typical bistable electrical switching and a rewritable memory effect, with a turn-on voltage of about -1.2 V and an ON/OFF current ratio in excess of 10~4.

机译：读/写/执行：PFCF-RGO（见图）是通过甲亚胺叶立德的1,3-偶极环加成反应合成的。 ITO / RGO-PFCF / Al器件的J / V曲线清楚地显示了典型的双稳态电开关和可重写的存储效果，开启电压约为-1.2 V，开/关电流比超过10〜 4。

著录项

来源
《Chemistry: A European journal》 |2011年第49期|共7页
作者
Zhang B.; Liu G.; Chen Y.; Zeng L.-J.; Zhu C.-X.; Neoh K.-G.; Wang C.; Kang E.-T.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
1; 3-dipolar cycloaddition; conjugated polymers; reduced graphene oxide; rewritable memory; synthesis;

机译：1;3-偶极环加成;共轭聚合物;氧化石墨烯还原;可改写记忆;合成;

相似文献

外文文献
中文文献
专利

1. Conjugated polymer-grafted reduced graphene oxide for nonvolatile rewritable memory [J] . Zhang B., Liu G., Chen Y., Chemistry: A European journal . 2011,第49期

机译：共轭聚合物接枝还原氧化石墨烯用于非易失性可重写存储
2. Nonvolatile rewritable memory effects in graphene oxide functionalized by conjugated polymer containing fluorene and carbazole units [J] . Zhang B., Liu Y.-L., Chen Y., Chemistry: A European journal . 2011,第37期

机译：含芴和咔唑单元的共轭聚合物官能化的氧化石墨烯中的非易失性可重写存储效应
3. Conjugated-Polymer-Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect [J] . Xiao-Dong Zhuang, Yu Chen, Gang Liu, Advanced Materials . 2010,第15期

机译：共轭聚合物官能化氧化石墨烯的合成和非易失性可重写记忆效应
4. Graphene oxide and TiO2 nano-particle composite based nonvolatile memory [C] . Hong Chao, Fang-Yuan Yuan, Huaqiang Wu, Non-Volatile Memory Technology Symposium . 2015

机译：氧化石墨烯和TiO2纳米粒子复合非易失性存储器
5. Polysilicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memory devices design, fabrication and characterization. [D] . Bu, Jiankang. 2001

机译：多晶硅-氮氧化物-氧化硅（SONOS）非易失性半导体存储器件的设计，制造和表征。
6. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application [O] . Sangram K. Pradhan, Bo Xiao, Saswat Mishra, -1

机译：低功耗非易失性器件应用中还原氧化石墨烯存储单元的电阻切换行为
7. Electrodes: Reduced Graphene Oxide Electrodes with Wrinkled Surface for Nonvolatile Polymer Memory Device Compatibility (Small Methods 7/2018) [O] . Jie Chen, Xiangjing Wang, Hang Lu, 2018

机译：电极：具有皱纹表面的石墨烯氧化物电极，用于非易失性聚合物存储器件相容性（小方法7/2018）

Conjugated polymer-grafted reduced graphene oxide for nonvolatile rewritable memory

摘要

著录项

相似文献

相关主题

期刊订阅