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Electrochemistry of nanocrystalline 3C silicon carbide films

机译:纳米晶3C碳化硅膜的电化学

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Silicon carbide (SiC) films have been used frequently for high-frequency and powder devices but have seldom been applied as the electrode material. In this paper, we have investigated the electrochemical properties of the nanocrystalline 3C-SiC film in detail. A film with grain sizes of 5 to 20 nm shows a surface roughness of about 30 nm. The resistivity of the film is in the range of 3.5-6.2 kΩ cm. In 0.1 M H _2SO _4 solution, the film has a double-layer capacitance of 30-35 μF cm ~(-2) and a potential window of 3.0 V if an absolute current density of 0.1 mA cm ~(-2) is defined as the threshold. Its electrochemical activity was examined by using redox probes of [Ru(NH _3) _6] ~(2+/3+) and [Fe(CN) _6] ~(3-/4-) in aqueous solutions and by using redox probes of quinone and ferrocene in nonaqueous solutions. Diffusion-controlled, quasi-reversible electrode processes were achieved in four cases. The surface chemistry of the nanocrystalline 3C-SiC film was studied by electrochemical grafting with 4-nitrobenzenediazonium salts. The grafting was confirmed by time-of-flight secondary ion mass spectroscopy. All these results confirm that the nanocrystalline 3C-SiC film is promising for use as an electrode material.
机译:碳化硅(SiC)膜已频繁用于高频和粉末设备,但很少用作电极材料。在本文中,我们详细研究了纳米晶3C-SiC膜的电化学性能。晶粒尺寸为5至20nm的膜显示出约30nm的表面粗糙度。膜的电阻率在3.5-6.2kΩ·cm的范围内。在0.1 MH _2SO _4溶液中,如果将绝对电流密度定义为0.1 mA cm〜(-2),则薄膜具有30-35μFcm〜(-2)的双层电容和3.0 V的电位窗口。门槛。通过使用[Ru(NH _3)_6]〜(2 + / 3 +)和[Fe(CN)_6]〜(3- / 4-)的氧化还原探针和氧化还原探针检查其电化学活性非水溶液中的苯醌和二茂铁在四种情况下实现了扩散控制的准可逆电极工艺。通过4-硝基苯重氮盐的电化学接枝研究了纳米晶3C-SiC薄膜的表面化学性质。通过飞行时间二次离子质谱法确认了接枝。所有这些结果证实了纳米晶3C-SiC膜有望用作电极材料。

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