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In Situ Synthesis and Characterization of Poly(aryleneethynylene)-Grafted Reduced Graphene Oxide

机译:聚(亚芳基乙炔)接枝的还原氧化石墨烯的原位合成与表征

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摘要

Using highly soluble bromo-functionalized reduced graphene oxide (RGBr) as a key graphene template for surface-directing Sonogashira-Hagihara polymerization, a novel soluble poly(arylene-ethynylene)-grafted reduced graphene oxide, hereafter abbreviated as PAE-g-RGO, was prepared in situ. The entirely different electron distribution of LUMO and HOMO of PAE-g-RGO suggested the existence of a charge-transfer (CT) state (PAE(.-)-RGO(.+)). The negative G(CS) value (-2.57eV) indicates that the occurrence of the charge separation via (1)RGO* in o-DCB is exothermic and favorable. Upon irradiation with 365nm light, the light-induced electron paramagnetic resonance (LEPR) spectrum of PAE-g-RGO showed a decrease in the spin-state density owing to photoinduced intramolecular electron transfer events in this system. A sandwich-type Al/PAE-g-RGO/ITO device showed representative bistable electrical switching behavior. The nonvolatile memory performance was attributed to the CT-induced conductance changes, which was supported by molecular computation results and conductive atomic force microscopy (C-AFM) images.
机译:使用高溶解度的溴官能化还原氧化石墨烯(RGBr)作为表面导向Sonogashira-Hagihara聚合反应的关键石墨烯模板,一种新型的可溶性聚(亚芳基-乙炔基)接枝的还原氧化石墨烯,以下简称为PAE-g-RGO,是原地准备的。 PAE-g-RGO的LUMO和HOMO的完全不同的电子分布表明存在电荷转移(CT)状态(PAE(.-)-RGO(。+))。负G(CS)值(-2.57eV)表示o-DCB中通过(1)RGO *进行电荷分离是放热的并且有利的。在365nm的光照射下,由于该系统中的光诱导分子内电子转移事件,PAE-g-RGO的光诱导电子顺磁共振(LEPR)光谱显示自旋态密度降低。三明治型Al / PAE-g-RGO / ITO器件显示出典型的双稳态电开关性能。非易失性存储性能归因于CT诱导的电导率变化,这受到分子计算结果和导电原子力显微镜(C-AFM)图像的支持。

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