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Enhanced-Raman scattering from silicon nanoparticle substrates

机译:硅纳米粒子基质的增强拉曼散射

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摘要

Raman enhancement effect of the electrochemically roughened silicon substrate was studied with the excitation lines of 632.8 and 514.5 nm. Two kinds of Raman enhancement effects contributing to the overall Raman signal on the roughened silicon surfaces were found: the electromagnetic cavity resonance effect occurring on the particles at the submicron scale, and the resonant Raman effect occurring on the particles at the nanometer scale. The originally extremely weak fourth-order multiphonon band has been detected easily from the silicon nano-/micro-structures assisted by these enhancements. (C) 2003 Elsevier B.V. All rights reserved. [References: 24]
机译:用632.8和514.5 nm的激发线研究了电化学粗糙化硅衬底的拉曼增强效应。发现了两种对粗糙化的硅表面上的整体拉曼信号有贡献的拉曼增强效应:亚微米级颗粒上发生的电磁腔共振效应,以及纳米级颗粒上发生的共振拉曼效应。在这些增强的辅助下,可以很容易地从硅纳米/微结构中检测出本来极弱的四阶多声子带。 (C)2003 Elsevier B.V.保留所有权利。 [参考:24]

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