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Formation and STM tip-induced reduction of ultra thin SnO film on Au(111)

机译:Au(111)上超薄SnO膜的形成及STM尖端诱导还原

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摘要

This Letter presents a study on the oxidation of electrochemically deposited Sn monolayer on Au(1 1 1) surface and STM tip-induced reduction of as-prepared ultra thin SnO film. A threshold bias of 0.6 V (tip negative) at a low tunneling current of similar to50 pA is required to image the as-formed SnO thin film by STM, typical of a semiconductor characteristic. Increasing the tunneling current to similar to2 nA leads to the reduction of the SnO back to Sn. Based on the energy level calculation for the SnO, a mechanism involving direct electron tunneling is proposed to account for the tip-induced reduction. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 17]
机译:这封信提出了对Au(1 1 1)表面上电化学沉积的Sn单层的氧化和STM尖端诱导还原制备的超薄SnO膜的研究。为了通过STM对形成的SnO薄膜成像(典型的半导体特性),需要在类似于50 pA的低隧穿电流下施加0.6 V(尖端为负)的阈值偏置。将隧穿电流增加到接近2 nA会导致SnO还原回Sn。基于SnO的能级计算,提出了一种涉及直接电子隧穿的机制来解决尖端引起的还原。 (C)2003 Elsevier Science B.V.保留所有权利。 [参考:17]

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