Observation of intramolecular defects in n-alkanes C25H52-C29H60 by the positron annihilation method

Goworek T; Zaleski R; Wawryszczuk J

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Observation of intramolecular defects in n-alkanes C25H52-C29H60 by the positron annihilation method

机译：正电子an没法观察正构烷烃C25H52-C29H60的分子内缺陷

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The lifetime of ortho-positronium (o-Ps) in solid phases of long-chain n-alkanes was measured. In even-numbered alkanes, only one phase transition is observed; a very long lifetime is related to large free volumes near kink-shaped conformers. In odd-numbered alkanes (n less than or equal to 25), another solid phase (phase IV) is characterized by slightly increased o-Ps lifetime, which means the domination of end-gauche and double-gauche intramolecular defects. In C29H60 the structure of defects changes continuously in the whole range of phase IV. (C) 2004 Elsevier B.V. All rights reserved.

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《Chemical Physics Letters》 |2004年第3期|共3页
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Goworek T; Zaleski R; Wawryszczuk J;
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正文语种 eng
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NONPLANAR CONFORMERS; NUMBERED PARAFFINS; PHASE-TRANSITIONS; ROTATOR PHASE; X-RAY; TEMPERATURE; LIFETIMES; C23H48; C25H52;

机译：非平面共形体;数字链烷烃;相变;旋转相;X射线;温度;寿命;C23H48;C25H52;

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1. Observation of intramolecular defects in n-alkanes C25H52-C29H60 by the positron annihilation method [J] . Goworek T, Zaleski R, Wawryszczuk J Chemical Physics Letters . 2004,第1a3期

机译：正电子an没法观察正构烷烃C25H52-C29H60的分子内缺陷
2. Observation of a charge delocalization from Se vacancies in Bi_2Se_3: A positron annihilation study of native defects [J] . I. Unzueta, N. Zabala, V. Marin-Borras, Physical review. B, Condensed Matter And Materals Physics . 2016,第1期

机译：Bi_2Se_3中Se空位中电荷离域的观察：天然缺陷的正电子an没研究
3. Publisher's Note: Observation of a charge delocalization from Se vacancies in Bi_2Se_3: A positron annihilation study of native defects [Phys. Rev. B 94, 014117 (2016)] [J] . I. Unzueta, N. Zabala, V. Marin-Borras, Physical review . 2016,第5期

机译：出版者的注释：Bi_2Se_3中Se空位引起电荷离域的观察：天然缺陷的正电子an没研究[Phys。 B 94，014117（2016）版]
4. Study of Defects in Hydrogenated Amorphous Silicon by Constant Photocurrent Method and Positron Annihilation [C] . A.Amaral, G. Lavareda, C. Nunes de Carvalho, Symposium on Amorphous and Heterogeneous Silicon-Based Films-2001, Apr 16-20, 2001, San Francisco, California . 2001

机译：恒光流加正电子An没研究氢化非晶硅中的缺陷
5. Investigation of positron and positronium annihilation for positrons colliding with nitrogen and carbon monoxide using the PsARS method . [D] . Miller, Erik. 2006

机译：用PsARS法研究正电子与氮和一氧化碳碰撞中的正电子和ron an灭。
6. Gradient Microstructure Induced by Surface Mechanical Attrition Treatment (SMAT) in Magnesium Studied Using Positron Annihilation Spectroscopy and Complementary Methods [O] . Konrad Skowron, Ewa Dryzek, Mirosław Wróbel, 2020

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7. Positron Annihilation Study of Defects Induced by Various Cutting Methods in Stainless Steel Grade 304 [O] . P. Horodek, J. Dryzek, M. Wróbel 2011

机译：304不锈钢各种切削方法引起的正电子ni没研究。
8. Application of Positron Annihilation Method for the Study of Radiation Defects and Defects Formed in Other Ways. Final Report for the Period December 1981 - December 1985 [R] . Tumbev, G. 1987

机译：正电子湮没法在其他方法中辐射缺陷和缺陷研究中的应用。 1981年12月至1985年12月期间的最终报告

Observation of intramolecular defects in n-alkanes C25H52-C29H60 by the positron annihilation method

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