STM study of the electronic structure of PTCDA on Ag/Si(111)-root 3 x root 3

Zhang HM; Gustafsson JB; Johansson LSO

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STM study of the electronic structure of PTCDA on Ag/Si(111)-root 3 x root 3

机译：STMDA在Ag / Si（111）-根3 x根3上的电子结构的STM研究

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PTCDA molecules were evaporated onto the AG/Si(1 1 1)-root 3 x root 3 surface. Simple HOMO and LUMO models have been made to explain the STM images of the square and herringbone phases. The charge transfer from the substrate and the H-bonding between the molecules play crucial roles for the formation of these phases. We found that their electronic structures are strongly modified by the molecule-substrate and intermolecular interactions. As a result, the HOMO-LUMO gaps of the PTCDA films are different for different phases and thicknesses. The increase in the HOMO-LUMO gaps with film thicknesses is discussed based on the surface and the interface polarization effect.

机译：将PTCDA分子蒸发到AG / Si（1 1 1）-根3 x根3表面上。已经制作了简单的HOMO和LUMO模型来解释方相和人字形相的STM图像。电荷从底物转移以及分子之间的氢键在这些相的形成中起关键作用。我们发现它们的电子结构受到分子-底物和分子间相互作用的强烈修饰。结果，对于不同的相和厚度，PTCDA膜的HOMO-LUMO间隙是不同的。基于表面和界面极化效应，讨论了HOMO-LUMO间隙随膜厚的增加。

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来源
《Chemical Physics Letters》 |2010年第3期|共8页
作者
Zhang HM; Gustafsson JB; Johansson LSO;
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正文语种 eng
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关键词
herringbone; thicknesses; polarization;

机译：人字;厚度;极化;

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STM study of the electronic structure of PTCDA on Ag/Si(111)-root 3 x root 3

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