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Room-temperature ferromagnetism of vanadium-doped 6H-SiC

机译:钒掺杂6H-SiC的室温铁磁性

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摘要

Semiconductors doped with magnetic ions, also known as dilute magnetic semiconductors, reveal both semiconducting and ferromagnetic. In this Letter, we prepared vanadium-doped 6H-SiC single crystals for exhibiting ferromagnetism characteristic measured by superconducting quantum interference device (SQUID) magnetometer. Our work demonstrates that moderate doping of vanadium carbide powder into 6H-SiC is a novel attempt for finding ferromagnetism feature. And the testing results show that the observed magnetic signal is possibly contributing to V element. This phenomenon can be explained by sp-d exchange mechanism, and offers an experimental data for possibility of doping nonmagnetic atoms to control the local moments in wide band-gap semiconductors.
机译:掺杂有磁离子的半导体(也称为稀磁半导体)既具有半导体性又具有铁磁性。在这封信中,我们制备了钒掺杂的6H-SiC单晶,用于显示通过超导量子干涉仪(SQUID)磁力计测量的铁磁特性。我们的工作表明,将碳化钒粉末适度掺杂到6H-SiC中是发现铁磁性特征的新尝试。测试结果表明,观察到的磁信号可能是对V元素的贡献。这种现象可以通过sp-d交换机制解释,并提供了实验数据,表明可以掺杂非磁性原子来控制宽带隙半导体中的局部矩。

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