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首页> 外文期刊>ACS applied materials & interfaces >Enhancing Carrier Mobilities in Organic Thin-Film Transistors Through Morphological Changes at the Semiconductor/Dielectric Interface Using Supercritical Carbon Dioxide Processing
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Enhancing Carrier Mobilities in Organic Thin-Film Transistors Through Morphological Changes at the Semiconductor/Dielectric Interface Using Supercritical Carbon Dioxide Processing

机译：使用超临界二氧化碳处理通过半导体/介电界面处的形态变化来增强有机薄膜晶体管中的载流子迁移率

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摘要

Charge-carrier mobilities in poly(3-hexylthiophene) (P3HT) organic thin-film transistors (OTFTs) increase 5-fold when OTFTs composed of P3HT films on trichloro (1H, 1H, 2H, 2H-perfluorooctyl) silane (FTS) monolayers supported on SiO2 dielectric substrates (P3HT/FTS/SiO2/Si) are subjected to supercritical carbon dioxide (scCO(2)) processing. In contrast, carrier mobilities in P3HT/octadecyltrichlorosilane (OTS)/SiO2 OTFTs processed using scCO(2) are comparable to mobilities measured in as-cast P3HT/OTS/SiO2/Si devices. Topographical images of the free and buried interfaces of P3HT films reveal that scCO(2) selectively alters the P3HT morphology near the buried P3HT/FTS-SiO2 interface; identical processing has negligible effects at the P3HT/OTS-SiO2 interface. A combination of spectroscopic ellipsometry and grazing-incidence Xray diffraction experiments indicate insignificant change in the orientation distribution of the intermolecular pi-pi stacking direction of P3HT/FTS with scCO(2) processing. The improved mobilities are instead correlated with enhanced in-plane orientation of the conjugated chain backbone of P3HT after scCO(2) annealing. These findings suggest a strong dependence of polymer processing on the nature of polymer/substrate interface and the important role of backbone orientation toward dictating charge transport of OTFTs.
机译：当由三氯（1H，1H，2H，2H-全氟辛基）硅烷（FTS）单层上的P3HT薄膜组成的OTFT时，聚（3-己基噻吩）（P3HT）有机薄膜晶体管（OTFT）中的电荷载流子迁移率增加5倍。支撑在SiO2介电基板（P3HT / FTS / SiO2 / Si）上的超临界二氧化碳（scCO（2））处理。相反，使用scCO（2）处理的P3HT /十八烷基三氯硅烷（OTS）/ SiO2 OTFT中的载流子迁移率可与铸态P3HT / OTS / SiO2 / Si设备中测得的迁移率相比。 P3HT膜的自由界面和掩埋界面的地形图显示，scCO（2）有选择地改变了掩埋的P3HT / FTS-SiO2界面附近的P3HT形态。在P3HT / OTS-SiO2界面上，相同的处理效果可忽略不计。椭圆偏振光谱法和掠入射X射线衍射实验的组合表明，scCO（2）处理的P3HT / FTS分子间pi-pi堆积方向的取向分布无明显变化。改进的迁移率与scCO（2）退火后P3HT的共轭链骨架的面内定向增强相关。这些发现表明，聚合物加工强烈依赖于聚合物/基底界面的性质以及主链取向对决定OTFT的电荷传输的重要作用。

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