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首页> 外文期刊>ACS applied materials & interfaces >Sn Spheres Embedded in a SiO2 Matrix: Synthesis and Potential Application As Self-Destructing Materials
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Sn Spheres Embedded in a SiO2 Matrix: Synthesis and Potential Application As Self-Destructing Materials

机译：嵌入SiO2基体中的锡球：合成及自毁材料的潜在应用

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摘要

We introduce a simple process for the fabrication of SiO2 films embedded with beta-Sn-rich nano/microspheres. Sn spheres with maximum and minimum sizes of 10 mu m (near the SiO2 surface) and 5 nm (at the Si/SiO2 interface) were grown within a 0.7-5.7 mu m-thick SiO2 layer by evaporating SnO powders onto an Si (100) substrate for 1-600 min at 600-900 degrees C and 0.001-5.0 Torr. A possible growth mechanism of these materials is discussed. The current-voltage characteristics of the as-fabricated samples were investigated to identify potential applications. During these tests, small flashes of light and the presence of damaged areas were observed at the oxide surfaces of the samples using an optical camera and a field emission scanning electron microscope, respectively. The electrical breakdown and shutdown of the devices observed in the current-voltage curves were attributed to the destruction of the SiO2 surface. In addition, the current-time responses show that the size of the damaged regions can be controlled by the voltage and duration of the applied stress, and are independent of the size and shape of the electrodes. The present materials thus possess great potential for applications devices.
机译：我们介绍了一种简单的工艺，用于制造嵌入有富含β-Sn的纳米/微球的SiO2薄膜。通过将SnO粉末蒸发到Si（100）上，最大和最小尺寸为10μm（在SiO2表面附近）和5 nm（在Si / SiO2界面）的Sn球在0.7-5.7μm厚的SiO2层中生长。 ）基材在600-900摄氏度和0.001-5.0托下进行1-600分钟。讨论了这些材料可能的生长机理。研究了所制备样品的电流-电压特性，以确定潜在的应用。在这些测试中，分别使用光学相机和场发射扫描电子显微镜在样品的氧化物表面观察到少量闪光和损坏区域的存在。在电流-电压曲线中观察到的器件的电击穿和关断归因于SiO2表面的破坏。另外，电流-时间响应表明，受损区域的大小可以通过电压和施加应力的持续时间来控制，并且与电极的大小和形状无关。因此，本发明材料对于应用装置具有巨大的潜力。

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