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首页> 外文期刊>ACS applied materials & interfaces >Sequential Solvent Exchange Method for Controlled Exfoliation of MoS2 Suitable for Phototransistor Fabrication
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Sequential Solvent Exchange Method for Controlled Exfoliation of MoS2 Suitable for Phototransistor Fabrication

机译:适用于光电晶体管制造的MoS2剥离的顺序溶剂交换法

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摘要

In this study, flakes of molybdenum disulfide (MoS2) with controlled size and thickness are prepared through sequential solvent exchange method by sonication in dimethylformamide (DMF) and N-methyl-2-pyrrolidone (NMP) solvents. While NMP acts more effectively in reducing the thickness of flakes, DMF shows better potential in conserving the lateral size of nanosheets. The distribution of size and thickness of nanoflakes as a function of sonication time verifies that extended sonication results in dramatic drop of the dimension of the exfoliated flakes. This technique leads to the formation of few-layered MoS2 flakes without further drop of their lateral dimensions. It has been observed that by exposing the bulk MoS2 powders to oxygen plasma, the exfoliation process is accelerated without converting to 2H-MoS2 structures. Finally, a phototransistor has been fabricated based on few layered MoS2 layers with a field effect mobility of similar to 2.1 cm(2) V-1 s(-1) showing a high response to laser excitation of 532 nm wavelength.
机译:在这项研究中,通过在二甲基甲酰胺(DMF)和N-甲基-2-吡咯烷酮(NMP)溶剂中进行超声处理,通过顺序的溶剂交换方法,制备了尺寸和厚度可控的二硫化钼薄片。尽管NMP在减少薄片厚度方面更有效,但DMF在保持纳米片的横向尺寸方面显示出更好的潜力。纳米薄片的尺寸和厚度的分布作为超声处理时间的函数,验证了延长的超声处理导致剥落薄片的尺寸急剧下降。该技术导致形成了几层的MoS2薄片,而其横向尺寸没有进一步下降。已经观察到,通过将块状MoS 2粉末暴露于氧等离子体中,加速了剥离过程,而没有转化为2H-MoS 2结构。最后,已经基于几层MoS2层制造了一个光电晶体管,其场效应迁移率类似于2.1 cm(2)V-1 s(-1),显示了对532 nm波长的激光激发的高响应。

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