Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

Hoffman Benjamin C.; McAfee Terry; Conrad Brad R.; Loth Marsha A.; Anthony John E.; Ade Harald W.; Dougherty Daniel B.

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Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

机译：固有电荷俘获被观察为diF-TES-ADT膜中的表面电势变化

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Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.

机译：用开尔文探针力显微镜测量通过有机分子在SiO2和硅烷处理的SiO2衬底上生长的2,8-二氟-5,11-双（三乙基甲硅烷基乙炔基）噻吩基噻吩（diF-TES-ADT）薄膜的表面电势的空间变化束沉积。在多晶有机膜的晶粒之间和之内都观察到这种变化，并且该变化与基板表面上的静电变化在数量上不同。 SiO2上的表面电势分布的偏斜度大于HMDS处理过的基板。该观察结果归因于基板功能化对最小化可捕获电荷的有机膜中固有晶体缺陷的影响。

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《ACS applied materials & interfaces》 |2016年第33期|共7页
作者
Hoffman Benjamin C.; McAfee Terry; Conrad Brad R.; Loth Marsha A.; Anthony John E.; Ade Harald W.; Dougherty Daniel B.;
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正文语种 eng
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organic electronics; Kelvin probe force microscopy; charge traps; anthradithiophene; thin films;

机译：有机电子学;开尔文探针力显微镜;电荷陷阱;蒽噻吩;薄膜;

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1. Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films [J] . Hoffman Benjamin C., McAfee Terry, Conrad Brad R., ACS applied materials & interfaces . 2016,第33期

机译：固有电荷俘获被观察为diF-TES-ADT膜中的表面电势变化
2. Trap-limited charge recombination in intrinsic perovskite film and meso-superstructured perovskite solar cells and the passivation effect of the hole-transport material on trap states [J] . Wang Yi, Wang Hao-Yi, Yu Man, Physical chemistry chemical physics: PCCP . 2015,第44期

机译：固有钙钛矿薄膜和介孔超结构钙钛矿太阳能电池中的陷阱有限电荷复合以及空穴传输材料对陷阱态的钝化效应
3. Charge Trapping Induced Current Instability In Pentacene Thin Film Transistors: Trapping Barrier And Effect Of Surface Treatment [J] . T, Miyadera, S, Applied Physicsletters . 2008,第3期

机译：并五苯薄膜晶体管中电荷陷阱引起的电流不稳定性：陷阱势垒和表面处理的影响
4. Influence of the contact effects on the variation of the trapped charge in the intrinsic channel of organic thin film transistors [C] . Awawdeh K.M., Tejada J.A.Jimenez, Varo P.Lopez, Spanish Conference on Electron Devices . 2013

机译：接触效应对有机薄膜晶体管本征沟道中俘获电荷变化的影响
5. Charge trapping in polymer dielectrics and potentials at organic donor-acceptor junctions---the role of interface and bulk contributions. [D] . Alley, Olivia. 2016

机译：聚合物电介质中的电荷俘获和有机供体-受体结处的电势-界面和体贡献的作用。
6. Photogenerated charges and surface potential variations investigated on single Si nanorods by electrostatic force microscopy combined with laser irradiation [O] . Shan Wu, Zilong Wu, Dongdong Lin, 2014

机译：静电力显微镜结合激光辐照研究单硅纳米棒上的光生电荷和表面电势变化
7. Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films [O] . -1

机译：本征电荷俘获观察到DIF-TES-ADT薄膜的表面电位变化

Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

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