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首页> 外文期刊>ACS applied materials & interfaces >Conformal BaTiO3 Films with High Piezoelectric Coupling through an Optimized Hydrothermal Synthesis
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Conformal BaTiO3 Films with High Piezoelectric Coupling through an Optimized Hydrothermal Synthesis

机译：通过优化水热合成高压电耦合的保形BaTiO3薄膜

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Two-dimensional (2D) ferroelectric films have vast applications due to their dielectric, ferroelectric, and piezoelectric properties that meet the requirements of sensors, nonvolatile ferroelectric random access memory (NVFeRAM) devices, and micro-electromechanical systems (MEMS). However, the small surface area of these 2D ferroelectric films has limited their ability to achieve higher memory storage density in NVFeRAM devices and more sensitive sensors and transducer. Thus, conformally deposited ferroelectric films have been actively studied for these applications in order to create three-dimensional (3D) structures, which lead to a larger surface area. Most of the current methods developed for the conformal deposition of ferroelectric films, such as metal organic chemical vapor deposition (MOCVD) and plasma-enhanced vapor deposition (PECVD), are limited by high temperatures and unstable and toxic organic precursors. In this paper, an innovative fabrication method for barium titanate (BaTiO3) textured films with 3D architectures is introduced to alleviate these issues. This fabrication method is based on converting conformally grown rutile TiO2 nanowire arrays into BaTiO3 textured films using a simple two-step hydrothermal process which allows for thickness-controlled growth of conformal films on patterned silicon wafers coated with fluorine-doped tin oxide (FTO). Moreover, the processing parameters have been optimized to achieve a high piezoelectric coupling coefficient of 100 pm/V. This high piezoelectric response along with high relative dielectric constant (epsilon(r) = 1600) of the conformally grown textured BaTiO3 films demonstrates their potential application in sensors, NVFeRAM, and MEMS.
机译：二维（2D）铁电薄膜由于其介电，铁电和压电特性满足传感器，非易失性铁电随机存取存储器（NVFeRAM）器件和微机电系统（MEMS）的要求而具有广泛的应用。但是，这些2D铁电薄膜的小表面积限制了它们在NVFeRAM器件以及更灵敏的传感器和换能器中实现更高存储容量的能力。因此，已经对这些应用积极地研究了共形沉积的铁电薄膜，以产生三维（3D）结构，从而导致更大的表面积。为铁电薄膜的保形沉积而开发的当前大多数方法，例如金属有机化学气相沉积（MOCVD）和等离子体增强气相沉积（PECVD），都受到高温以及不稳定且有毒的有机前体的限制。本文介绍了一种具有3D架构的钛酸钡（BaTiO3）纹理膜的创新制造方法，以缓解这些问题。该制造方法基于使用简单的两步水热工艺将共形生长的金红石TiO2纳米线阵列转换为BaTiO3织构化膜，该工艺允许在涂覆有氟掺杂氧化锡（FTO）的图案化硅晶片上控制共形膜的厚度受控生长。此外，已经优化了加工参数以实现100 pm / V的高压电耦合系数。保形生长的纹理化BaTiO3膜的高压电响应以及高相对介电常数（ε= 1600）证明了其在传感器，NVFeRAM和MEMS中的潜在应用。

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