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首页> 外文期刊>ACS applied materials & interfaces >Influence of Gas Adsorption and Gold Nanoparticles on the Electrical Properties of CVD-Grown MoS2 Thin Films
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Influence of Gas Adsorption and Gold Nanoparticles on the Electrical Properties of CVD-Grown MoS2 Thin Films

机译：气体吸附和金纳米颗粒对CVD生长的MoS2薄膜电性能的影响

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摘要

Molybdenum disulfide (MoS2) has increasingly attracted attention from researchers and is now one of the most intensively explored atomic-layered two-dimensional semiconductors. Control of the carrier concentration and doping type of MoS2 is crucial for its application in electronic and optoelectronic devices. Because the MoS2 layers are atomically thin, their transport characteristics may be very sensitive to ambient gas adsorption and the resulting charge transfer. We investigated the influence of the ambient gas (N-2, H-2/N-2, and O-2) choice on the resistance (R) and surface work function (WF) of trilayer MoS2 thin films grown via chemical vapor deposition. We also studied the electrical properties of gold (Au)-nanoparticle (NP)-coated MoS, thin films; their R value was found to be 2 orders of magnitude smaller than that for bare samples. While the WF largely varied for each gas, R was almost invariant for both the bare and Au-NP-coated samples regardless of which gas was used. Temperature-dependent transport suggests that variable range hopping is the dominant mechanism for electrical conduction for bare and Au-NP-coated MoS2 thin films. The charges transferred from the gas adsorbates might be insufficient to induce measurable R change and/or be trapped in the defect states. The smaller WF and larger localization length of the Au-NP-coated sample, compared with the bare sample, suggest that more carriers and less defects enhanced conduction in MoS2.
机译：二硫化钼（MoS2）越来越受到研究人员的关注，现在已成为研究最深入的原子层二维半导体之一。 MoS2的载流子浓度和掺杂类型的控制对其在电子和光电设备中的应用至关重要。由于MoS2层在原子上很薄，因此它们的传输特性可能对周围气体的吸附以及由此产生的电荷转移非常敏感。我们研究了环境气体（N-2，H-2 / N-2和O-2）选择对通过化学气相沉积法生长的三层MoS2薄膜的电阻（R）和表面功函数（WF）的影响。我们还研究了金（Au）-纳米颗粒（NP）涂覆的MoS薄膜的电性能;发现它们的R值比裸露的样品小2个数量级。尽管每种气体的WF差异很大，但无论使用哪种气体，裸露样品和Au-NP涂层样品的R几乎不变。温度依赖性传输表明，可变范围跳变是裸露和Au-NP涂层的MoS2薄膜导电的主要机理。从气体吸附物中转移的电荷可能不足以引起可测量的R变化和/或被困在缺陷状态中。与裸样品相比，Au-NP涂层样品的WF较小且定位长度较大，这表明更多的载流子和更少的缺陷增强了MoS2的导电性。

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