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X-ray absolute calibration of the time response of a silicon photodiode

机译：硅光电二极管的时间响应的X射线绝对校准

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摘要

The time-dependent response of a 1-mm~(2) silicon photodiode was characterized by use of pulsed synchrotron radiation in the 4- to 16-nm-wavelength range. Modeling the input radiation pulse and the electrical response of the photodiode allowed the photodiode's capacitance as a function of wavelength and applied bias voltage to be determined. The capacitance was in the 7- to 19-pF range and resulted in response fall times as small as 0.4 ns. The capacitance determined by pulsed x-ray illumination was in good agreement with the capacitance determined by pulsed optical laser illumination. The absolute responsivity was measured by comparison with the responsivity of a calibrated photodiode.
机译：1-mm〜（2）硅光电二极管的时间依赖性响应是通过使用4至16 nm波长范围内的脉冲同步加速器辐射来表征的。通过对输入辐射脉冲和光电二极管的电响应进行建模，可以确定光电二极管的电容与波长的关系，并确定施加的偏置电压。电容在7至19 pF的范围内，并导致响应下降时间小至0.4 ns。通过脉冲X射线照射确定的电容与通过脉冲光学激光照射确定的电容非常一致。通过与校准的光电二极管的响应度比较来测量绝对响应度。

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