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Deposition and characterization of silica-based films by helicon-activated reactive evaporation applied to optical waveguide fabrication

机译:二氧化硅基薄膜的螺旋激活反应蒸发沉积和表征,应用于光波导制造

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摘要

Planar silicon dioxide optical waveguides were deposited by use of a plasma-activated reactive evaporation system, at a low deposition temperature and with reduced hydrogen contamination, on thermally oxidized silicon wafers. The deposited films show a refractive-index inhomogeneity of less than 0.1%, a thickness nonuniformity of less than 5%, and a material birefringence of approximately 5×10~(-4). Rib-type channel waveguides were formed on the deposited films by means of hydrofluoric acid etching. The transmission loss of the rib waveguides is determined to be as low as 0.3 dB/cm at a wavelength of 1310 nm for TE polarization, after subtraction of the calculated leakage and scattering losses. Owing to the presence of the OH vibrational overtone band, an additional loss peak of 1 dB/cm is found near the 1385-nm wavelength. The experimental results of transmission loss at wavelengths of 1310 and 1550 nm are compared with analytic expressions for interface scattering and leakage loss.
机译:通过使用等离子体活化的反应性蒸发系统,以较低的沉积温度和减少的氢污染,将平面二氧化硅光波导沉积在热氧化的硅晶片上。所沉积的膜表现出小于0.1%的折射率不均匀性,小于5%的厚度不均匀性以及大约5×10 4(-4)的材料双折射。借助于氢氟酸蚀刻在沉积的膜上形成肋型通道波导。在减去所计算的泄漏和散射损耗之后,对于TE偏振,在1310 nm波长处,肋形波导的传输损耗被确定为低至0.3 dB / cm。由于存在OH振动泛音带,在1385 nm波长附近发现了另外一个1 dB / cm的损耗峰。将在1310和1550 nm波长处的传输损耗的实验结果与界面散射和泄漏损耗的解析表达式进行了比较。

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