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Characterization of AlF_(3) thin films at 193 nm by thermal evaporation

机译:热蒸发法表征193 nm AlF_(3)薄膜

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摘要

Aluminum fluoride (AlF_(3)) was deposited by a resistive heating boat. To obtain a low optical loss and high laser-induced damage threshold (LIDT) at 193 nm, the films were investigated under different substrate temperatures, deposition rates, and annealing after coating. The optical property (the transmittance, refractive index, extinction coefficient, and optical loss) at 193 nm, microstructure (the cross-sectional morphology, surface roughness, and crystalline structure), mechanical property (stress), and LIDT of AlF_(3) thin films have been studied. AlF_(3) thin films deposited at a high substrate temperature and low deposition rate showed a lower optical loss. The highest LIDT occurred at the substrate temperature of 150 deg C. The LIDT of the films prepared at a deposition rate of 2 A/s was higher than that at other deposition rates. The annealing process did not influence the optical properties too much, but it did increase the LIDT and stress.
机译:通过电阻加热舟皿沉积氟化铝(AlF_(3))。为了在193 nm处获得较低的光损耗和较高的激光诱导损伤阈值(LIDT),在不同的基材温度,沉积速率和涂覆后的退火条件下研究了膜。 193 nm的光学性质(透射率,折射率,消光系数和光损耗),AlF_(3)的微观结构(截面形态,表面粗糙度和晶体结构),力学性质(应力)和LIDT已经研究了薄膜。以较高的基板温度和较低的沉积速率沉积的AlF_(3)薄膜显示出较低的光学损耗。最高的LIDT发生在基板温度为150摄氏度时。以2 A / s的沉积速率制备的薄膜的LIDT高于其他沉积速率的薄膜。退火过程对光学性能没有太大影响,但是确实增加了LIDT和应力。

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