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首页> 外文期刊>Applied optics >Rapid subsurface detection of nanoscale defects in live microprocessors by functional infrared emission spectral microscopy
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Rapid subsurface detection of nanoscale defects in live microprocessors by functional infrared emission spectral microscopy

机译：通过功能性红外发射光谱显微镜快速地下检测带电微处理器中的纳米级缺陷

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摘要

We demonstrate the rapid and nondestructive detection of subsurface nanometer-size defects in 90 nm technology live microprocessors with a new technique called functional infrared emission spectral microscopy. Broken, leaky, and good transistors with similar photoemission images are identified from each other by their different emission spectra that are calculated as linear combinations of weighted basis spectra. The basis spectra are derived from a spectral library by principal component analysis. Leaky transistors do not exhibit apparent morphological damage and are undetectable by optical or scanning probe microscopy alone. The emission signals from two or more transistors combined incoherently, and defect detection is primarily limited by the signal-to-noise ratio of the detected spectrum and not by the separation distance of neighboring transistors.
机译：我们演示了使用一种称为功能红外发射光谱显微镜的新技术，在90 nm技术现场微处理器中快速，无损地检测亚表面纳米尺寸缺陷的方法。具有彼此相似的光发射图像的损坏，漏气和良好的晶体管可以通过其不同的发射光谱相互识别，这些发射光谱计算为加权基础光谱的线性组合。基础光谱通过主成分分析从光谱库中导出。泄漏的晶体管没有表现出明显的形态损坏，并且仅通过光学或扫描探针显微镜无法检测到。来自两个或更多个晶体管的发射信号不相干地组合在一起，并且缺陷检测主要受检测光谱的信噪比限制，而不受相邻晶体管的分离距离限制。

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