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Effects of annealing on the optical, structural, and chemical properties of TiO_(2) and MgF_(2) thin films prepared by plasma ion-assisted deposition

机译:退火对等离子体离子辅助沉积制备的TiO_(2)和MgF_(2)薄膜的光学,结构和化学性质的影响

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Effects of thermal annealing at 400 deg C on the optical, structural, and chemical properties of TiO_(2) single-layer, MgF_(2) single-layer, and TiO_(2)/MgF_(2) narrow-bandpass filters deposited by conventional electron-beam evaporation (CE) and plasma ion-assisted deposition (PIAD) were investigated. In the case of TiO_(2) films, the results show that the annealing of both CE and PIAD TiO_(2) films increases the refractive index slightly and the extinction coefficient and surface roughness greatly. Annealing decreases the thickness of CE TiO_(2) films drastically, whereas it does not vary that of PIAD TiO_(2) films. For PIAD MgF_(2) films, annealing increases the refractive index and decreases the extinction coefficient drastically. An x-ray photoelectron spectroscopy analysis suggests that an increase in the refractive index and a decrease in the extinction coefficient for PIAD MgF_(2) films after annealing may be related to the enhanced concentration of MgO in the annealed PIAD MgF_(2) films and the changes in the chemical bonding states of Mg 2p, F 1s, and O 1s. It is found that (TiO_(2)/MgF_(2)) multilayer filters, consisting of PIAD TiO_(2) and CE MgF_(2) films, are as deposited without microcracks and are also thermally stable after annealing.
机译:400℃热退火对TiO_(2)单层,MgF_(2)单层和TiO_(2)/ MgF_(2)窄带通滤光片沉积的光学,结构和化学性质的影响研究了常规电子束蒸发(CE)和等离子体离子辅助沉积(PIAD)。在TiO_(2)薄膜的情况下,结果表明,CE和PIAD TiO_(2)薄膜的退火都会稍微增加折射率,并且消光系数和表面粗糙度会大大提高。退火大大降低了CE TiO_(2)膜的厚度,而没有改变PIAD TiO_(2)膜的厚度。对于PIAD MgF_(2)薄膜,退火会显着增加折射率并降低消光系数。 X射线光电子能谱分析表明,退火后PIAD MgF_(2)膜的折射率增加和消光系数降低可能与退火的PIAD MgF_(2)膜中MgO的浓度增加有关,并且Mg 2p,F 1s和O 1s的化学键态的变化。发现由PIAD TiO_(2)和CE MgF_(2)膜组成的(TiO_(2)/ MgF_(2))多层滤光片沉积时没有微裂纹,并且在退火后也具有热稳定性。

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