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Sensitivity study of two high-throughput resolution metrics for photoresists

机译：光刻胶的两个高通量分辨率指标的敏感性研究

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摘要

The resolution of chemically amplified resists is becoming an increasing concern, especially for lithography in the extreme ultraviolet (EUV) regime. Large-scale screening is currently under way to identify resist platforms that can support the demanding specifications required for ELTV lithography. Current screening processes would benefit from the development of metrics that can objectively quantify resist resolution in a high-throughput fashion. Here we examine two high-throughput metrics for resist resolution determination. After summarizing their details and justifying their utility, we characterize the sensitivity of both metrics to known uncertainties in exposure tool aberrations and focus control. For an implementation at EUV wavelengths, we report aberration and focus-limited error bars in extracted resolution of approximate to 1.25 nm rms for both metrics, making them attractive candidates for future screening and downselection efforts. (c) 2008 Optical Society of America.
机译：化学放大的抗蚀剂的分辨率越来越引起人们的关注，尤其是在极紫外（EUV）领域的光刻技术中。目前正在进行大规模筛选，以识别可以支持ELTV光刻所需的苛刻规格的抗蚀剂平台。当前的筛选过程将受益于可以以高通量方式客观地量化抗蚀剂分辨率的度量标准。在这里，我们检查了两个用于确定抗蚀剂分辨率的高通量指标。在总结了它们的细节并证明了它们的实用性之后，我们描述了这两个指标对曝光工具像差和聚焦控制中已知不确定性的敏感性。对于在EUV波长下的实现，我们报告了像差和聚焦受限的误差线，这两种指标的提取分辨率约为1.25 nm rms，使其成为将来筛选和降选工作的有吸引力的候选对象。 （c）2008年美国眼镜学会。

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