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首页> 外文期刊>Applied optics >Photocurrent switching method based on photoisomerization of diarylethene layer for nondestructive readout of photochromic optical memory
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Photocurrent switching method based on photoisomerization of diarylethene layer for nondestructive readout of photochromic optical memory

机译：基于二芳基乙烯层光异构化的光电流切换方法，用于无损读出光致变色光学存储器

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摘要

We report on photocurrent switching based on photoisomerization for the nondestructive readout of photochromic optical memory. The photoisomerization of a diarylethene (DAE) memory layer switched the photocurrent generated in a light-absorbing phthalocyanine layer upon irradiation of a laser light. This switching is based on the ionization potential change of the DAE molecules. Switching characteristics of the photocurrent were investigated for the laser light with a wavelength of 410 nm, 630 nm, or 780 nm. Excellent on-off ratios of the photocurrent were achieved by irradiation at 630 nm and 780 nm. When the pulsed laser light with a wavelength of 780 nm was repeatedly irradiated to the colored and uncolored memory devices, no change of the photocurrent signal levels was observed, even after 8 X 10~(5) cycles, indicating a successful demonstration of the nondestructive readout.
机译：我们报告基于光致变色光存储器的非破坏性读出基于光异构化的光电流切换。二芳基乙烯（DAE）存储层的光异构化可切换激光照射后在吸光酞菁层中产生的光电流。此切换基于DAE分子的电离电势变化。对于波长为410 nm，630 nm或780 nm的激光，研究了光电流的开关特性。通过在630nm和780nm处照射获得了优异的光电流开-关比。当将波长为780 nm的脉冲激光重复照射到有色和无色存储设备时，即使在8 X 10〜（5）个循环之后，也未观察到光电流信号电平的变化，这表明无损检测的成功展示。读出。

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