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Laser damage properties of TiO_(2)/Al_(2)O_(3) thin films grown by atomic layer deposition

机译:原子层沉积生长的TiO_(2)/ Al_(2)O_(3)薄膜的激光损伤特性

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摘要

Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO_(2)/Al_(2)O_(3) films at 110 deg C and 280 deg C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99percent over 100 mm PHI samples, and the transmission is more than 99.8percent at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO_(2)/Al_(2)O_(3) films, the LIDTs were 6.73 +- 0.47 J/cm~(2) and 6.5 +- 0.46 J/cm~(2) at 110 deg C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg C are notably better than 280 deg C.
机译:通过原子层沉积(ALD)沉积薄膜以提高抗激光损伤的研究很少。在本文中,已将其用于在熔融石英和BK7衬底上分别在110℃和280℃沉积TiO_(2)/ Al_(2)O_(3)薄膜。通过x射线衍射研究了薄膜的微观结构。样品的激光诱导损伤阈值(LIDT)通过损伤测试系统进行测量。在Nomarski微分干涉对比显微镜下研究损伤形态,并在原子力显微镜下进一步检查。比较了在不同温度下沉积的多层。结果表明,ALD沉积的薄膜具有较好的均匀性和透光性。在100 mm PHI样品中,均匀性优于99%,在1064 nm处的透射率大于99.8%。沉积温度影响沉积速率和薄膜微结构,并进一步影响薄膜的LIDT。对于TiO_(2)/ Al_(2)O_(3)薄膜,熔融时110摄氏度时的LIDTs为6.73±0.47 J / cm〜(2)和6.5±0.46J / cm〜(2)硅胶和BK7基板。 110摄氏度时的LIDT明显优于280摄氏度。

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