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Optimal proportional relation between laser power and pulse number for the fabrication of surface-microstructured silicon

机译:制造表面微结构硅的激光功率与脉冲数之间的最佳比例关系

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We experimentally demonstrate that, under the same laser fluence, there exists an optimal proportional relation between the laser power and pulse number for the fabrication of surface-microstructured silicon. During this fabrication process, the pulse number represents the interaction time between the laser and the silicon, which determines the depth of energy transferred into the inner part of the material, while the laser power determines the ablation and volatilization rate of the silicon. The proper combination of laser power and pulse number can ablate the material on the silicon surface effectively and have enough time to transfer the energy into the deep layer, which can produce microstructured silicon with a high spike. In addition, we compare the absorptance of samples etched by different combinations of laser power and pulse number; the corresponding results further prove the existence of an optimal proportional relation.
机译:我们实验证明,在相同的激光通量下,用于制造表面微结构硅的激光功率和脉冲数之间存在最佳比例关系。在此制造过程中,脉冲数代表激光与硅之间的相互作用时间,它决定了转移到材料内部的能量深度,而激光功率则决定了硅的烧蚀和挥发速率。激光功率和脉冲数的适当组合可以有效地烧蚀硅表面上的材料,并有足够的时间将能量转移到深层中,从而可以生产出具有高尖峰的微结构化硅。另外,我们比较了激光功率和脉冲数的不同组合所蚀刻的样品的吸收率。相应的结果进一步证明了最优比例关系的存在。

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