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Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs

机译：三端栅极和雪崩型硅LED的电流电压特性和量子效率提高

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摘要

In this paper, the emission of visible light by a monolithically integrated silicon p-n junction under reverse-bias is discussed. The modulation of light intensity is achieved using an insulated-gate terminal on the surface of the p-n junction. By varying the gate voltage, the breakdown voltage of the p-n junction will be adjustable so that the reverse current I_(sub) flowing through the p-n junction at a fixed reverse-bias voltage is changed. It is observed that the light, which is emitted from the defects located at the p-n junction, depends closely on the reverse current I_(sub). In regard to the phenomenon of electroluminescence, the relationship between the optical emission power and the reverse current I_(sub) is linear. On the other hand, it is observed that both the quantum efficiency and the power conversion efficiency are able to have obvious enhancement, although the reverse-bias of the p-n junction is reduced and the corresponding reverse-current is much lower. Moreover, the successful fabrication on monolithic silicon light source on the bulk silicon by means of standard silicon complementary metal-oxide-semiconductor process technology is presented.
机译：在本文中，讨论了在反向偏置下通过单片集成的硅p-n结发射可见光的问题。使用p-n结表面上的绝缘栅端子可实现光强度的调制。通过改变栅极电压，可以调节p-n结的击穿电压，从而改变以固定的反向偏置电压流过p-n结的反向电流I_（sub）。可以看出，从位于p-n结处的缺陷发出的光密切依赖于反向电流I_（sub）。关于电致发光现象，光发射功率与反向电流I_（sub）之间的关系是线性的。另一方面，可以观察到，尽管减小了p-n结的反向偏置并且相应的反向电流低得多，但是量子效率和功率转换效率都能够具有明显的提高。此外，通过标准的硅互补金属氧化物半导体工艺技术，成功地在体硅上制造了单片硅光源。

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    《Applied optics》 |2013年第27期|共7页
  • 作者

    Kaikai Xu;

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