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Photonic nanojet-enhanced nanometer-scale germanium photodiode

机译:光子纳米射流增强型纳米锗光电二极管

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摘要

A design challenge for photodiodes yielding both high speed and responsivity is the necessity to concentrate incident light into a subwavelength active volume region. Photonic nanojets have been reported in the literature as a means to focus an incident plane wave to a subwavelength-waist propagating beam with applications ranging from next-generation DVDs to characterizing subwavelength features within dielectric targets. In the present work, a new application of photonic nanojets is proposed, focusing electromagnetic energy into a photodiode. Three-dimensional finite-difference time-domain solutions are conducted to determine the advantages of photonic nanojet-enhanced photodiodes at near-infrared wavelengths (1310 nm). We find that photonic nanojets provide a factor of 26 increase in the volume-integrated electric field within the subwavelength active volume of the photodiode of size 0.0045 μm~3. Furthermore, this increase is achieved independent of the incident polarization and over a broad bandwidth. Photonic nanojets may thus serve as an attractive alternative to plasmonics for some applications.
机译:产生高速度和响应性的光电二极管的设计挑战是必须将入射光集中到亚波长有源体积区域中。在文献中已经报道了光子纳米射流作为一种将入射平面波聚焦到亚波长腰传播光束的方法,其应用范围从下一代DVD到表征介电目标内的亚波长特征。在目前的工作中,提出了光子纳米射流的新应用,它将电磁能聚焦到光电二极管中。进行三维有限差分时域解决方案,以确定在近红外波长(1310 nm)处光子纳米喷射增强的光电二极管的优势。我们发现,光子纳米射流在尺寸为0.0045μm〜3的光电二极管的亚波长有效体积内,体积积分电场增加了26倍。此外,这种增加是独立于入射极化并在较宽的带宽上实现的。因此,在某些应用中,光子纳米射流可以替代等离子技术。

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