首页> 外文期刊>Applied optics >Process variation in silicon photonic devices
【24h】

Process variation in silicon photonic devices

机译:硅光子器件中的工艺变化

获取原文
获取原文并翻译 | 示例
           

摘要

An array of passive silicon-on-insulator optical devices is laid out in repeating patterns on four foundry-fabricated wafers. The physical and optical characterization of these microrings, racetrack resonators, and directional couplers are found to exhibit significant variation in optical response. A device-heating experiment carried out on a number of different devices demonstrates that thermal effects are independent of the device's location on the wafer. An analysis of the variation of the optical responses of the room-temperature devices is used to determine the process variation. We find that if we form successive arrays of the values of a quantity of interest (the peak wavelength of a transfer function) at a single device at some point on the wafer, and then increase the size of the array by including the values of the devices at ever greater distances from the original, then the variance of the values of the successive arrays increases linearly with the linear extent of the sample. That is, the process variation exhibits "random walk" pattern with spatial extent. We express the process variation in units of variance per length and find that our measured values agree with others in the literature; that is, the process variation is approximately 1 nm~2/cm.
机译:绝缘体上无源硅光学器件的阵列以重复的图案布置在四个铸造制造的晶片上。发现这些微环,跑道谐振器和定向耦合器的物理和光学特性在光学响应方面表现出显着变化。在许多不同的器件上进行的器件加热实验表明,热效应与器件在晶片上的位置无关。对室温设备的光学响应变化的分析用于确定过程变化。我们发现,如果我们在晶片上的某个点上的单个设备上形成感兴趣量的值(传递函数的峰值波长)的连续数组,然后通过增加数组的值来增加数组的大小。如果设备与原始设备之间的距离越来越远,则连续数组的值的方差随样本的线性范围线性增加。即,过程变化表现出具有空间范围的“随机游动”模式。我们用每个长度的方差单位表示过程变化,发现我们的测量值与文献中的其他值一致;即,工艺变化约为1nm 2 / cm。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号