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Photosensitivity of gallium-doped silica core fiber to 193 nm ArF excimer laser

机译:掺镓硅芯光纤对193 nm ArF准分子激光的光敏性

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摘要

Grating inscription in a Ga-doped silica core fiber (similar to 5 wt. % Ga) has been demonstrated using ArF (193 nm) and KrF (248 nm) excimer lasers. In a comparative study with germanosilicate fiber with similar Ge concentration, a Ga-doped silica core fiber shows greater photosensitivity to an ArF excimer laser due to the higher absorbance in the region of 190-195 nm. In addition, the photosensitivity of a Ga-doped silica core fiber has been greatly enhanced with hydrogenation. Ga-doped fibers are potential photosensitive fibers for fiber Bragg grating production with an ArF excimer laser. (C) 2015 Optical Society of America
机译:已经使用ArF(193 nm)和KrF(248 nm)准分子激光器证明了掺Ga石英芯光纤(类似于5 wt。%Ga)中的光栅铭文。在具有相似Ge浓度的锗硅酸盐纤维的比较研究中,由于在190-195 nm范围内有较高的吸收率,所以掺Ga的二氧化硅芯纤维对ArF准分子激光表现出更高的光敏性。另外,通过氢化,大大地提高了掺杂Ga的二氧化硅芯纤维的光敏性。掺Ga的光纤是潜在的光敏纤维,用于使用ArF准分子激光器生产布拉格光栅。 (C)2015年美国眼镜学会

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