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Higher Q factor and higher extinction ratio with lower detection limit photonic crystal-parallel-integrated sensor array for on-chip optical multiplexing sensing

机译:更高的Q因子和更高的消光比以及更低的检测极限光子晶体并行集成传感器阵列,用于片上光复用传感

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We introduce an alternative method to establish a nanoscale sensor array based on a photonic crystal (PhC) slab, which is referred to as a 1 x 4 monolithic PhC parallel-integrated sensor array (PhC-PISA). To realize this function, four lattice-shifted resonant cavities are butt-coupled to four output waveguide branches, respectively. By shifting the first to the two closest neighboring holes around the defect, a high Q factor over 1.5 x 10(4) has been obtained. Owing to the slightly different cavity spacing, each PhC resonator shows an independent resonant peak shift as the refractive index changes surrounding the resonant cavity. The specific single peak with a well-defined extinction ratio exceeds 25 dB. By applying the finite-difference time-domain (FDTD) method, we demonstrate that the sensitivities of each sensor in PhC-PISA S-1 = 60.500 nm/RIU, S-2 = 59.623 nm/RIU, S-3 = 62.500 nm/RIU, and S-4 = 51.142 nm/RIU (refractive index unit) are achieved, respectively. In addition, the negligible crosstalk and detection limit as small as 1 x 10(-4) have been observed. The proposed sensor array as a desirable platform has great potential to realize optical multiplexing sensing and high-density monolithic integration. (C) 2016 Optical Society of America
机译:我们介绍了一种替代方法,以基于光子晶体(PhC)平板建立纳米级传感器阵列,该方法称为1 x 4整体式PhC并行集成传感器阵列(PhC-PISA)。为了实现该功能,将四个晶格移位谐振腔分别对接耦合到四个输出波导分支。通过将第一个孔移到缺陷周围的两个最邻近的孔,可以获得超过1.5 x 10(4)的高Q因子。由于腔间距略有不同,每个PhC谐振器在折射率围绕谐振腔变化时都会显示出独立的谐振峰位移。具有明确定义的消光比的特定单峰超过25 dB。通过应用时域有限差分(FDTD)方法,我们证明了PhC-PISA S-1中每个传感器的灵敏度= 60.500 nm / RIU,S-2 = 59.623 nm / RIU,S-3 = 62.500 nm / RIU和S-4 = 51.142nm / RIU(折射率单位)。此外,观察到的串扰和检测限可忽略不计,小至1 x 10(-4)。提出的传感器阵列作为理想的平台,具有实现光复用传感和高密度单片集成的巨大潜力。 (C)2016美国眼镜学会

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