Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs

Kuo Chien-Ting; Hsu Lung-Hsing; Huang Bo-Hsin; Kuo Hao-Chung; Lin Chien-Chung; Cheng Yuh-Jen

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Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs

机译：图案化蓝宝石衬底的微观结构几何形状对GaN LED的光提取效率的影响

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The influence of the microstructure geometry of patterned sapphire substrates (PSS) on the light extraction efficiency (LEE) of GaN light-emitting diodes (LEDs) is numerically analyzed. Cone structures of various dimensions are studied, along with dome and mixed microstructures. LEE is found to mainly depend on the microstructure surface slope. LEE rises quickly with slope and flattens out when the slope exceeds 0.6. Scaling down the microstructure has little effect on LEE. Light rays are found to travel longer distances in PSS LEDs, as compared with LEDs grown on a flat substrate. Keeping GaN absorption loss low is important for LEE optimization. (C) 2016 Optical Society of America

机译：数值分析了图案化蓝宝石衬底（PSS）的微观结构对GaN发光二极管（LED）的光提取效率（LEE）的影响。研究了各种尺寸的锥体结构，以及圆顶和混合的微观结构。发现LEE主要取决于微观结构的表面斜率。 LEE随斜率快速上升，当斜率超过0.6时变平。缩小微观结构对LEE的影响很小。与在平坦基板上生长的LED相比，发现PSS LED中的光线传播的距离更长。保持GaN吸收损耗低对于LEE优化很重要。（C）2016美国眼镜学会

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《Applied optics》 |2016年第26期|共5页
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Kuo Chien-Ting; Hsu Lung-Hsing; Huang Bo-Hsin; Kuo Hao-Chung; Lin Chien-Chung; Cheng Yuh-Jen;
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1. Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs [J] . Kuo Chien-Ting, Hsu Lung-Hsing, Huang Bo-Hsin, Applied optics . 2016,第26期

机译：图案化蓝宝石衬底的微观结构几何形状对GaN LED的光提取效率的影响
2. Improved Light Extraction Efficiency of GaN Based Blue Light Emitting Diode Using Nano-Scaled Patterned Sapphire Substrate [J] . Sung Young Hoon, Park Jaemin, Choi Eun-Seo, Journal of Nanoelectronics and Optoelectronics . 2019,第12期

机译：使用纳米尺度图案蓝宝石衬底改善GaN基蓝光发光二极管的光提取效率
3. Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate [J] . C. B. Soh, K. H. Dai, W. Liu, Physica status solidi, B. Basic research . 2010,第7期

机译：通过在图案化的蓝宝石衬底上生长的纳米孔ITO p接触提高GaN基LED的光提取效率
4. Improvement of light extraction efficiency of GaN-based flip-chip LEDs by a double-sided spherical cap-shaped patterned sapphire substrate [C] . Zhen Che, Jun Zhang, Xinyu Yu, International Conference on Numerical Simulation of Optoelectronic Devices . 2016

机译：双面球形帽状图案蓝宝石衬底提高了GaN基倒装芯片LED的光提取效率
5. Optically functional structures on GaN-based light-emitting diodes for light-extraction efficiency enhancement and emission pattern control. [D] . Ma, Ming. 2013

机译：GaN基发光二极管上的光学功能结构，用于提高光提取效率和控制发射模式。
6. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate [O] . Chia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, 2014

机译：蓝宝石衬底上具有反应性等离子体沉积AlN成核层的GaN基紫外发光二极管的效率提高
7. Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate [O] . Ya-ju Lee, Ching-hua Chiu, Chih Chun Ke, 2009

机译：在图案化蓝宝石衬底上生长的InGaN / GaN LED中激发功率相关的内量子效率的研究
8. Gallium Nitride Light Emitter on a Patterned Sapphire Substrate for Improved Defectivity and Light Extraction Efficiency [R] . Mastro, M. A., Kim, B., Jung, Y., 2010

机译：图案化蓝宝石衬底上的氮化镓发光体，可提高缺陷率和光提取效率

Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs

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