A tri-band transparent conductive indium tin oxide (In2O3:Sn, ITO) film for the visible, near-infrared (NIR) and mid-infrared (MIR) was deposited on a sapphire substrate by radio frequency (RF) magnetron sputtering. Deposition parameters, including RF power, substrate temperature, and oxygen flow rate, were optimized to improve the optical property without reducing the conductivity of the film by maximizing the Hall mobility and minimizing the carrier concentration. Films deposited at optimized conditions exhibit a Hall mobility of similar to 20 cm(2) V-1 s(-1), a carrier concentration of similar to 4.99 x 10(20) cm(-3), and a sheet resistance of 61.2 Omega/sq. Average transmissions of these films are 81.40% in the 0.4-1.6 mu m region and 60.81% in the 3.0-5.0 mu m region. An index-matching stack of MgF2 was developed, improving the transmittance to 90.55% and 73.20% in the regions above, respectively. These results make ITO film a promising alternative material to conventional metal mesh for missile domes shielding electromagnetic waves. (C) 2016 Optical Society of America
展开▼
机译：通过射频（RF）磁控溅射在蓝宝石衬底上沉积用于可见，近红外（NIR）和中红外（MIR）的三波段透明导电铟锡氧化物（In2O3：Sn，ITO）膜。通过最大化霍尔迁移率和最小化载流子浓度，优化了包括RF功率，基板温度和氧气流速在内的沉积参数，以改善光学性能而不会降低薄膜的电导率。在最佳条件下沉积的膜表现出的霍尔迁移率类似于20 cm（2）V-1 s（-1），载流子浓度类似于4.99 x 10（20）cm（-3），薄层电阻为61.2欧米茄/平方这些膜的平均透射率在0.4-1.6μm区域中为81.40％，在3.0-5.0μm区域中为60.81％。开发了MgF2的折射率匹配堆栈，将上述区域的透射率分别提高到90.55％和73.20％。这些结果使ITO膜成为用于屏蔽电磁波的导弹圆顶的常规金属网的有前途的替代材料。 （C）2016美国眼镜学会
展开▼
