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首页> 外文期刊>Applied optics >Barrier layer induced channeling effect of As ion implantation in HgCdTe and its influences on electrical properties of p-n junctions
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Barrier layer induced channeling effect of As ion implantation in HgCdTe and its influences on electrical properties of p-n junctions

机译：HgCdTe中As离子注入的势垒层诱导沟道效应及其对p-n结电学性质的影响

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The HgCdTe layers (x(Cd) similar to 0.285 and 0.225) were grown by molecular beam epitaxy and liquid phase epitaxy, respectively, followed by the deposition of CdTe and ZnS films as barrier layers by thermal evaporation. Then, the p-on-n photodiodes were fabricated by AS ion implantation, Hg overpressure annealing, passivation, and metallization. The secondary ion mass spectrometry and transmission electron microscopy results indicate that the evaporated CdTe layer with a column structure induces the channeling effect of As ion implantation causing the device performance degradation. This effect could be suppressed by depositing a CdTe film with a layered structure through E-beam evaporation. Finally, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these p-n junctions were estimated and analyzed. (C) 2016 Optical Society of America
机译：通过分子束外延和液相外延分别生长HgCdTe层（x（Cd）类似于0.285和0.225），然后通过热蒸发沉积CdTe和ZnS膜作为阻挡层。然后，通过AS离子注入，Hg超压退火，钝化和金属化来制造p-on-n光电二极管。二次离子质谱和透射电子显微镜结果表明，具有柱状结构的蒸发CdTe层会诱导As离子注入的沟道效应，从而导致器件性能下降。通过电子束蒸发沉积具有分层结构的CdTe膜可以抑制这种影响。最后，估算并分析了这些p-n结的电流-电压（I-V）和电容-电压（C-V）特性。 （C）2016美国眼镜学会

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