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首页> 外文期刊>Electrochimica Acta >Facile preparation of p-CuO and p-CuO-CuWO_4 junction thin films and their photoelectrochemical properties
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Facile preparation of p-CuO and p-CuO-CuWO_4 junction thin films and their photoelectrochemical properties

机译：p-CuO和p-CuO / n-CuWO_4结薄膜的简便制备及其光电化学性能

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摘要

CuO/CuWO_4 p-n junction thin films were prepared by using electrodeposited Cu films with an acidic cupric lactate system (pH ≤ 5). The photoelectrochemical properties of CuO and CuWO_4-CuO films were studied by photoresponse and current-potential characteristics under 1 sun illumination. The photocurrent of CuO films prepared by annealing Cu films electrodeposited at pH 5 is about 0.6 mA/cm~2 at -0.6 V vs Ag/AgCl. Both p-type and n-type behaviors occurred on CuO-CuWO_4 film in the potential range from 0.8 V to -0.6 V vs Ag/AgCl. The photoelectrochemical photocurrent switching (PEPS) effect was observed in the case of p-CuO-CuWO_4 heterojunction and the photocurrent switching potential is +0.33 V vs Ag/AgCl.
机译：通过使用具有酸性乳酸铜（pH≤5）的电沉积铜膜制备CuO / CuWO_4 p-n结薄膜。通过在1个阳光照射下的光响应和电流电势特性研究了CuO和CuWO_4-CuO薄膜的光电化学性质。与-Ag / AgCl相比，通过在-0.6V下对在pH 5下电沉积的Cu膜进行退火而制备的CuO膜的光电流为约0.6mA / cm〜2。与Ag / AgCl相比，CuO-CuWO_4膜上的p型和n型行为均发生在0.8 V至-0.6 V的电势范围内。在p-CuO / n-CuWO_4异质结的情况下观察到光电化学光电流切换（PEPS）效果，并且光电流切换电势相对于Ag / AgCl为+0.33V。

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