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首页> 外文期刊>Nano letters >Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients
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Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

机译：基于自诱导组成梯度的单个GaAsSb纳米线器件的整流

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摘要

Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p-n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.
机译：允许载流子在半导体中单向传播的设备配置是电子和光电应用的基本组件。然而，为了实现这种装置，通常需要具有复杂的工艺来制造p-n或肖特基结。在这里，我们报告了由于GaAsSb纳米线（NWs）中自我感应的成分变化引起的单向传播效应。各个GaAsSb NW表现出高度可复制的整流行为，其中整流方向由NW的生长方向决定。结合共焦显微拉曼光谱，电子显微镜和电学测量的结果，发现整流行为的起源与Sb和NW中载流子浓度的自感应变化有关。为了证明这些GaAsSb NW在器件应用中的有用性，已经制作了基于NW的光电探测器和逻辑电路。

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