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首页> 外文期刊>Nano letters >Revealing Energy Level Structure of Individual Quantum Dots by Tunneling Rate Measured by Single-Electron Sensitive Electrostatic Force Spectroscopy
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Revealing Energy Level Structure of Individual Quantum Dots by Tunneling Rate Measured by Single-Electron Sensitive Electrostatic Force Spectroscopy

机译：通过单电子敏感静电力谱法测量的隧穿速率揭示单个量子点的能级结构。

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摘要

We present theoretical and experimental studies of the effect of the density of states of a quantum dot (QD) on the rate of single-electron tunneling that can be directly measured by electrostatic force microscopy (e-EFM) experiments. In e-EFM, the motion of a biased atomic force microscope cantilever tip modulates the charge state of a QD in the Coulomb blockade regime. The charge dynamics of the dot, which is detected through its back-action on the capacitavely coupled cantilever, depends on the tunneling rate of the QD to a back-electrode. The density of states of the QD can therefore be measured through its effect on the energy dependence of tunneling rate. We present experimental data on individual 5 nm colloidal gold nanoparticles that exhibit a near continuous density of state at 77 K. In contrast, our analysis of already published data on self-assembled InAs QDs at 4 K clearly reveals discrete degenerate energy levels.
机译：我们目前对量子点（QD）的状态密度对单电子隧穿速率的影响进行理论和实验研究，可以通过静电力显微镜（e-EFM）实验直接测量该速率。在e-EFM中，偏置原子力显微镜悬臂尖端的运动会在库仑封锁状态下调节QD的电荷状态。通过点在电容耦合的悬臂上的背作用来检测的点的电荷动力学取决于QD到背电极的隧穿速率。因此，可以通过QD对隧穿速率的能量依赖性的影响来测量其状态密度。我们提供了单个5 nm胶态金纳米颗粒的实验数据，这些纳米颗粒在77 K时表现出接近连续的状态密度。相反，我们对4 K时自组装InAs QD的已发表数据的分析清楚地表明了离散的简并能级。

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