Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions

Wu Bing; Zhao Yinghe; Nan Haiyan; Yang Ziyi; Zhang Yuhan; Zhao Huijuan; He Daowei; Jiang Zonglin; Liu Xiaolong; Li Yun; Shi Yi; Ni Zhenhua; Wang Jinlan; Xu Jian-Bin; Wang Xinran

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Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions

机译：Van der Waals相互作用量身定制的超薄有机半导体的精确自限外延和异质结

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Precise assembly of semiconductor heterojunctions is the key to realize many optoelectronic devices. By exploiting the strong and tunable van der Waals (vdW) forces between graphene and organic small molecules, we demonstrate layer-by-layer epitaxy of ultrathin organic semiconductors and heterostructures with unprecedented precision with well-defined number of layers and self-limited characteristics. We further demonstrate organic p-n heterojunctions with molecularly flat interface, which exhibit excellent rectifying behavior and photovoltaic responses. The self-limited organic molecular beam epitaxy (SLOMBE) is generically applicable for many layered small-molecule semiconductors and, may lead to advanced organic optoelectronic devices beyond bulk heterojunctions.

机译：半导体异质结的精确组装是实现许多光电器件的关键。通过利用石墨烯与有机小分子之间的强大且可调的范德华（vdW）力，我们以前所未有的精度，定义的层数和自限性特性证明了超薄有机半导体和异质结构的逐层外延。我们进一步展示了具有分子平面界面的有机p-n异质结，表现出出色的整流性能和光伏响应。自限有机分子束外延（SLOMBE）通常适用于许多层状小分子半导体，并且可能导致超出体异质结的先进有机光电器件。

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来源
《Nano letters》 |2016年第6期|共6页
作者
Wu Bing; Zhao Yinghe; Nan Haiyan; Yang Ziyi; Zhang Yuhan; Zhao Huijuan; He Daowei; Jiang Zonglin; Liu Xiaolong; Li Yun; Shi Yi; Ni Zhenhua; Wang Jinlan; Xu Jian-Bin; Wang Xinran;
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正文语种 eng
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Two-dimensional; organic crystals; van der Waals epitaxy; heterojunctions;

机译：二维;有机晶体;范德华外延;异质结;

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1. Generalized Van der Waals Equation for Liquid-Vapor Equilibria in a Stationary Gravitational Field [J] . Makokiyu Godlove Akumbom, Georges Collince Fouokeng, Martin Tchoffo, 凝固态物理国际期刊（英文） . 2021,第001期
2. Multiplicity of thermodynamic states of van der Waals gas in nanobubbles [J] . Xu Tang, Hongguang Zhang, Zhenjiang Guo, 中国化学工程学报（英文版） . 2021,第003期
3. Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics [J] . Yanhao Wang, Jinbo Pang, Qilin Cheng, 纳微快报：英文版 . 2021,第009期
4. Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions [J] . Wu Bing, Zhao Yinghe, Nan Haiyan, Nano letters . 2016,第6期

机译：Van der Waals相互作用量身定制的超薄有机半导体的精确自限外延和异质结
5. Realization of vertical and lateral van der Waals heterojunctions using two-dimensional layered organic semiconductors [J] . Yuhan Zhang1 Zhongzhong Luo1 Fengrui Hu2 Haiyan Nan3 Xiaoyong Wang2 Zhenhua Ni3 Jianbin Xu14 Yi Shi1 Xinran Wang1 纳米研究：英文版 . 2017,第004期

机译：使用二维分层有机半导体实现垂直和横向范德华异质结
6. Realization of vertical and lateral van der Waals heterojunctions using two-dimensional layered organic semiconductors [J] . Yuhan Zhang, Zhongzhong Luo, Fengrui Hu, 纳米研究（英文版） . 2017,第004期

机译：使用二维分层有机半导体实现垂直和横向范德华异质结
7. Indirect-direct band gap transition by van der Waals interaction engineering in MoS_2/WS_2 bilayer heterojunction [C] . Haining Cao, Zhiya Zhang, Mingsu Si, International Conference on Machinery, Electronics and Control Simulation . 2014

机译：van der WALS交互工程在MOS_2 / WS_2双层异质结中的间接直接带隙转换
8. Van der Waals Epitaxy of Ultrathin Early Transition Metal (Ti & V) (di)Selenides: Charge and Magnetic Order in the Ultrathin Limit [D] . Lopez, Manuel Bonilla. 2020

机译：Ulthath早期过渡金属（Ti＆V）（DI）硒化合物的范围（DI）：超薄极限中的电荷和磁场
9. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy [O] . Xufan Li, Ming-Wei Lin, Junhao Lin, 2016

机译：范德华磊晶的二维GaSe / MoSe2失配双层异质结
10. A van der Waals pn heterojunction with organic/inorganic semiconductors [O] . He, D, Pan, Y, Nan, H, 2015

机译：范德华与有机/无机半导体的pn异质结

Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions

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