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Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

机译：应变纤锌矿型磷化镓纳米线的光学性质

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摘要

Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, ate only weakly allowed by the symmetry of the bands. While efficient luminescence has;been experimentally shown, the nature of the transitions is not yet dear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Gamma(7c) symmetry and not exclusively related to the Gamma(8c) conduction band minimum (CBM). The results emphasize the importance of strongly bound state related emission in the pseudodirect semiconductor WZ GaP and contribute-significantly to the understanding of the optoelectronic properties of this novel material.
机译：据预测，纤锌矿型磷化镓镓（WZ GaP）在绿色光谱范围内表现出直接带隙。然而，光的跃迁仅在频带的对称性允许下微弱地进食。虽然已经通过实验证明了有效发光，但是过渡的性质还不高。在这里，我们施加高达6％的拉伸应变，并研究WZ GaP纳米线（NWs）的光致发光（PL）光谱的演变。发射的压力和极化相关性以及对应变效应的理论分析被用来确定过渡的性质和对称性。我们确定发射线与局部状态相关，具有明显的Gamma（7c）对称性混合，而不仅与Gamma（8c）导带最小值（CBM）相关。结果强调了伪直接半导体WZ GaP中与强束缚态有关的发射的重要性，并且对理解这种新型材料的光电特性做出了重要贡献。

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