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Catalyst-free growth of mono-and few-atomic-layer boron nitride sheets by chemical vapor deposition

机译：通过化学气相沉积法无催化剂地生长单层和少原子层的氮化硼片

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Boron nitride (BN) is a wide bandgap semiconductor with a structure analogous to graphite. Mono-and few-atomic-layer BN sheets have been grown on silicon substrates by microwave plasma chemical vapor deposition from a gas mixture of BF_3-H_2-N_2 without using any catalysts. Growth of the BN sheets can be ascribed to the etching effects of the fluorine-containing gases and the thickness control down to mono-and few-atomic-layers was realized by decreasing the concentrations of BF _3 and H_2 in N_2. A large decrease of the BF _3 and H_2 concentrations was achieved by increasing the gas flow rate of N_2 and keeping the BF_3 and H_2 flow rates constant and the mono-and few-atomic-layered BN sheets were obtained at the BF_3, H_2 and N_2 flow rates of 3, 10, and 1200 sccm. The present mono-and few-atomic-layer BN sheets are promising for applications in catalyst supports, composites, gas adsorption, nanoelectronics, etc.
机译：氮化硼（BN）是一种宽带隙半导体，其结构类似于石墨。在不使用任何催化剂的情况下，通过从BF_3-H_2-N_2的气体混合物中进行微波等离子体化学气相沉积，在硅基板上生长了单原子层和少数原子层的BN片。 BN片材的生长可以归因于含氟气体的蚀刻作用，并且通过降低N_2中的BF_3和H_2的浓度实现了厚度控制到单原子层和几个原子层。通过增加N_2的气体流量并保持BF_3和H_2的流量恒定，可以实现BF _3和H_2浓度的大幅降低，并且在BF_3，H_2和N_2处获得了单原子层和少量原子层的BN片。 3、10和1200 sccm的流速。当前的单原子层和很少原子层的BN片有望用于催化剂载体，复合材料，气体吸附，纳米电子学等领域。

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