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Realization of effective light trapping and omnidirectional antireflection in smooth surface silicon nanowire arrays

机译:在光滑表面的硅纳米线阵列中实现有效的光捕获和全向减反射

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We have successfully fabricated well-ordered silicon nanowire (SiNW) arrays of smooth surface by using a low-cost and facile Ag-assisted chemical etching technique. We have experimentally found that the reflectance can be significantly suppressed (<1%) over a wide solar spectrum (300-1000 nm) in the as-grown samples. Also, based on our bundled model, we have used rigorous coupled-wave analysis to simulate the reflectance in SiNW arrays, and found that the calculated results are in good agreement with the experimental data. From a further simulation study on the light absorption in SiNW arrays, we have obtained a photocurrent enhancement of up to 425% per unit volume of material as compared to crystalline Si, implying that effective light trapping can be realized in the as-grown samples. In addition, we have demonstrated experimentally and theoretically that the as-grown samples have an omnidirectional high-efficiency antireflection property.
机译:我们已经通过使用低成本且便捷的Ag辅助化学蚀刻技术成功制造了表面光滑的有序硅纳米线(SiNW)阵列。我们通过实验发现,在所生长的样品中,反射率可以在较宽的太阳光谱(300-1000 nm)范围内得到显着抑制(<1%)。此外,基于捆绑模型,我们使用严格的耦合波分析来模拟SiNW阵列中的反射率,发现计算结果与实验数据非常吻合。通过对SiNW阵列中光吸收的进一步仿真研究,我们获得了与结晶Si相比每单位体积材料高达425%的光电流增强,这意味着可以在生长的样品中实现有效的光捕获。另外,我们在实验和理论上证明了所生长的样品具有全向高效减反射性能。

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