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Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

机译：石墨烯纳米网基器件具有很强的负微分电导效应

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Using atomistic quantum simulation based on a tight binding model, we have investigated the transport characteristics of graphene nanomesh-based devices and evaluated the possibilities of observing negative differential conductance. It is shown that by taking advantage of bandgap opening in the graphene nanomesh lattice, a strong negative differential conductance effect can be achieved at room temperature in pn junctions and n-doped structures. Remarkably, the effect is improved very significantly (with a peak-to-valley current ratio of a few hundred) and appears to be weakly sensitive to the transition length in graphene nanomesh pn hetero-junctions when inserting a pristine (gapless) graphene section in the transition region between n and p zones. The study therefore suggests new design strategies for graphene electronic devices which may offer strong advantages in terms of performance and processing over the devices studied previously.
机译：使用基于紧密结合模型的原子量子模拟，我们研究了基于石墨烯纳米网的器件的传输特性，并评估了观察负微分电导的可能性。结果表明，通过利用石墨烯纳米网格中的带隙开口，可以在室温下在pn结和n掺杂结构中实现很强的负微分电导效应。显着地，该效果得到了显着改善（峰谷电流比为数百），并且当在其中插入原始（无间隙）石墨烯部分时，似乎对石墨烯纳米网pn异质结的过渡长度不敏感。 n和p区域之间的过渡区域。因此，该研究提出了针对石墨烯电子器件的新设计策略，与先前研究的器件相比，该设计策略在性能和处理方面可能具有强大的优势。

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