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Contact printing of compositionally graded CdS _xSe _1-_x nanowire parallel arrays for tunable photodetectors

机译:用于可调光电探测器的成分渐变CdS _xSe _1-_x纳米线平行阵列的接触印刷

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摘要

Spatially composition-graded CdS _xSe _(1x) (x=01) nanowires are grown and transferred as parallel arrays onto Si/SiO _2 substrates by a one-step, directional contact printing process. Upon subsequent device fabrication, an array of tunable-wavelength photodetectors is demonstrated. From the spectral photoconductivity measurements, the cutoff wavelength for the device array, as determined by the bandgap, is shown to cover a significant portion of the visible spectrum. The ability to transfer a collection of crystalline semiconductor nanowires while preserving the spatially graded composition may enable a wide range of applications, such as tunable lasers and photodetectors, efficient photovoltaics, and multiplexed chemical sensors.
机译:生长空间组成分级的CdS _xSe _(1x)(x = 01)纳米线,并通过一步定向接触印刷工艺将其作为平行阵列转移到Si / SiO _2衬底上。在随后的器件制造中,展示了可调波长光电探测器的阵列。根据光谱的光电导率测量结果,由带隙确定的器件阵列的截止波长显示为覆盖了可见光谱的很大一部分。在保留空间梯度组成的同时转移晶体半导体纳米线集合的能力可以实现广泛的应用,例如可调谐激光器和光电探测器,高效光伏电池和多路复用化学传感器。

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